Epitaxial Planar Transistor

Description The PZT4401 is designed for general purpose switching and amplifier applications. Features * High Power Dissipation: 1500mW at 25 °C * High DC Current Gain: 100~300 at 150mA * Complementary to PZT4403

NPN switching transistor

NPN switching transistor

FEATURES •High current (max. 600 mA) •Low voltage. APPLICATIONS •Switching and linear amplification in industrial and consumer applications. DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT4403.

丝印代码：ZT4401；SOT-223 Plastic-Encapsulate Transistors

FEATURES Low Voltage and High Current Complementary to PZT4403 Linear Amplifier and Switch Applications

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT223 plastic package. PNP complement: PZT4403. FEATURES • High current (max. 600 mA) • Low voltage. APPLICATIONS • Switching and linear amplification in industrial and consumer applications.

SOT-223 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Voltage and High Current ● Complementary to PZT4403 ● Linear Amplifier and Switch Applications

丝印代码：ZT4401；NPN Transistors

■ Features ● Low Voltage and Low Current ● Linear Amplifier and Switch Applications ● Complementary to PZT4403

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

NPN Plastic-Encapsulate Transistors

Features ● Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ● Linear Amplifier and Switch Applications ● Epoxy meets UL 94 V-0 flammability rating ● Moisure Sensitivity Level 1 ● Halogen free available upon request by adding suffix -HF ● Marking:

NPN Transistor

文件：1.14081 Mbytes Page：2 Pages

NPN switching transistor

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 40V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Transistors

文件：943.02 Kbytes Page：2 Pages

NPN Transistor

文件：1.14081 Mbytes Page：2 Pages

NPN TRANSISTOR

文件：161.16 Kbytes Page：1 Pages

High Output Xenon Flashlamp

Description The new FX-4400 Light Source from PerkinElmer Optoelectronics is a compact, high-output, long-life pulsed xenon flashlamp that offers exceptional arc stability, microsecond pulse durations and a high-intensity continuous line spectrum from the deep UV to the far IR. Features

GaAlAs Infrared Light Emitting Diode

GaAlAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 10 mW (typ.) ● Fast response and high-speed modulation capability : fC = 20 MHz (typ.) ● TO-18 standard type package

NPN switching transistor

DESCRIPTION NPN switching transistor in a SOT89 plastic package. PNP complement: PXT4403. FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification in industrial and consumer applications.

Silicon NPN(PNP) epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● 2SB0709A(2SB709A) × 2 elements