丝印代码：P352I；LinCMOS™ DUAL DIFFERENTIAL COMPARATOR

Single- or Dual-Supply Operation Wide Range of Supply Voltages 1.5 V to 18 V Very Low Supply Current Drain 150 μA Typ at 5 V 65 μA Typ at 1.4 V Built-In ESD Protection High Input Impedance . . . 1012 Ω Typ Extremely Low Input Bias Current 5 pA Typ Ultrastable Low Input Offset Voltage Inp

LinCMOS DUAL DIFFERENTAL COMPARATOR

文件：864.51 Kbytes Page：16 Pages

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件：1.14868 Mbytes Page：18 Pages

丝印代码：P352I；LinCMOS™ DUAL DIFFERENTIAL COMPARATOR

Single- or Dual-Supply Operation Wide Range of Supply Voltages 1.5 V to 18 V Very Low Supply Current Drain 150 μA Typ at 5 V 65 μA Typ at 1.4 V Built-In ESD Protection High Input Impedance . . . 1012 Ω Typ Extremely Low Input Bias Current 5 pA Typ Ultrastable Low Input Offset Voltage Inp

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件：1.14868 Mbytes Page：18 Pages

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件：140.77 Kbytes Page：9 Pages

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

文件：31.46 Kbytes Page：1 Pages

Square Type

文件：32 Kbytes Page：1 Pages