丝印代码：P352I；LinCMOS™ DUAL DIFFERENTIAL COMPARATOR

Single- or Dual-Supply Operation Wide Range of Supply Voltages 1.5 V to 18 V Very Low Supply Current Drain 150 μA Typ at 5 V 65 μA Typ at 1.4 V Built-In ESD Protection High Input Impedance . . . 1012 Ω Typ Extremely Low Input Bias Current 5 pA Typ Ultrastable Low Input Offset Voltage Inp

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

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Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

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Square Type

文件：32 Kbytes Page：1 Pages