MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

isc N-Channel MOSFET Transistor

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Power MOSFET (N-ch 500V VDSS 700V)

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Fast reverse recovery time: trr = 120 ns(typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.12 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V(VDS = 10 V, ID = 1.2 mA)

isc N-Channel MOSFET Transistor

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Power MOSFET (N-ch 500V VDSS 700V)

MOSFET – N-Channel, SUPREMOS 600 V, 25 A, 126 m

Description The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on−re

Fast Switching

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N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET

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N-Channel MOSFET

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