MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.48 mA)

MOSFETs Silicon N-Channel MOS

Applications • Switching Power Supplies Features (1) Low drain-source on-resistance: RDS(ON) = 0.149 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA)

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.19 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 10 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MOS VI)

Switching Regulator Applications • Low drain−source ON resistance : RDS (ON) = 0. 25Ω (typ.) • High forward transfer admittance : |Yfs| = 14 S (typ.) • Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

包装：散装 描述：TERM BLK 19P SIDE ENTRY 5MM PCB 连接器，互连器件 线对板

Power MOSFET (N-ch 500V

Power MOSFET (N-ch 500V

Power MOSFET (N-ch 500V

iscN-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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Switching Regulator Applications

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Switching Regulator Applications

文件：208.13 Kbytes Page：6 Pages

iscN-Channel MOSFET Transistor

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