位置：首页 > IC中文资料第1728页 > TK11A65D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TK11A65D | MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 | TOSHIBA 东芝 |   | |
TK11A65D | isc N-Channel MOSFET Transistor 文件：296.88 Kbytes Page：2 Pages | ISC 无锡固电 | | |
TK11A65D | Power MOSFET (N-ch 500V VDSS 700V) | TOSHIBA 东芝 | | |
N-Channel 650V (D-S) Power MOSFET 文件：1.07166 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
MOSFETs Silicon N-Channel MOS Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 7.5 S (typ.) (3) Low leakage current: IDSS = 10 μA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 | TOSHIBA 东芝 | | ||
iscN-Channel MOSFET Transistor 文件：288.62 Kbytes Page：2 Pages | ISC 无锡固电 | |
TK11A65D产品属性
- 类型
描述
- 型号
TK11A65D
- 制造商
Toshiba America Electronic Components
- 功能描述
DISCRETE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
25+ |
TO-220F |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA(东芝) |
24+ |
N/A |
9048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TOSHIBA/东芝 |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
TOSHIBA/东芝 |
24+ |
TO-220F |
12 |
只做原厂渠道 可追溯货源 |
|||
TOSHIBA |
23+ |
TO220F |
10000 |
正规渠道,只有原装! |
|||
TOSHIBA/东芝 |
2410+ |
TO-220F |
80000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
TOSHIBA |
24+ |
TO220 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
TOSHIBA |
24+ |
TO220F |
5000 |
全新原装正品,现货销售 |
|||
TOSHIBA |
23+ |
TO220F |
20000 |
||||
TOSHIBA/东芝 |
2023+ |
TO-220F |
80000 |
全新原装正品,优势价格 |
TK11A65D规格书下载地址
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DdatasheetPDF页码索引
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