MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)

isc N-Channel MOSFET Transistor

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Power MOSFET (N-ch 250V VDSS 500V)

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PolarP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Rugged PolarPTM Process • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advan

PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

PolarP™ Power MOSFETs P-Channel Enhancement Mode Avalanche Rated Features • International Standard Packages • Avalanche Rated • Rugged PolarPTM Process • Low Package Inductance • Fast Intrinsic Diode Advantages • Easy to Mount • Space Savings • High Power Density Applications • High-

P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1Ω(Max)@VGS= -10V APPLICATIONS · Push Pull Amplifiers · High- Side Switches · DC Choppers · Automatic Test Equipment

High Voltage Power Supplies

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