POWER TRANSISTORS(25A,40-100V,125W)

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40 A Peak Collector Current • Customer-Specified Selections Available

Complementary Silicon Plastic Power Transistor

TEST SPECIFICATION Complementary Silicon Plastic Power Transistor

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

Complementary Silicon Power Transistor 25A/40~100V/125W

Complementary Silicon Power Transistor 25A/40~100V/125W FEATURES ● Complementary NPN-PNP transistors ● Low collector-emitter saturation voltage ● Satisfactory linearity of foward current transfer ratio hFE ● TO-3P package which can be installed to the heat sink with one screw ● Coll

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS.

COMPLEMENTARY SILICON POWER TRANSISTORS

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Silicon PNP Power Transistors

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封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 40V 25A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP SILICON POWER TRANSISTORS

Trans GP BJT PNP 40V 40A 3-Pin(3+Tab) TO-218

Power Managemant

Quad Integrated Communication IP based on MC68360

Application Information The TIP360 is an IndustryPack compatible module with a serial communication I/O interface using the Motorola MC68360 Quad Integrated Communication Processor running at 25 MHz. The MC68360 contains a CPU32 core processor, a micro coded RISC communication processor, 14 ser

POWER TRANSISTORS(25A,40-100V,125W)

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I

COMPLEMENTARY SILICON POWER TRANSISTORS

Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40 A Peak Collector Current • Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS(25A,40-100V,125W)

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40 A Peak Collector Current • Customer-Specified Selections Available

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applica

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Also TIP36B is a PNP type. ■ STMicroelectronic PREFERRED SALESTYPES

COMPLEMENTARY SILICON POWER TRANSISTORS

Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I

COMPLEMENTARY SILICON POWER TRANSISTORS

Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40 A Peak Collector Current • Customer-Specified Selections Available

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applica

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to TIP35C

TRIPLE DIFFUSED PNP TRANSISTOR(HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP35C. • Icmax:-25A.

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Also TIP36B is a PNP type. ■ STMicroelectronic PREFERRED SALESTYPES

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Complementary Silicon High Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

Audio amplifier

FEATURES ● High collector voltage：VCEO=100V (min) ● Low collector-emitter saturation voltage ● Complementary to TIP35C ● RoHS product APPLICATIONS ● Audio amplifier ● General purpose

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS.

Silicon PNP transistor in a TO-3P Plastic Package.

Descriptions Silicon PNP transistor in a TO-3P Plastic Package. Features Low leakage current, high current gain bandwidth product, Complementary to TIP35C. Applications Amplifier and switching applications.

HIGH POWER TRANSISTORS

DESCRIPTION The UTC TIP36C is a PNP Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP35C.

POWER TRANSISTORS(25A,40-100V,125W)

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Also TIP36B is a PNP type. ■ STMicroelectronic PREFERRED SALESTYPES

TRIPLE DIFFUSED PNP TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP35CA. • Icmax:-25A.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.