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TIP36晶体管资料
TIP36别名：TIP36三极管、TIP36晶体管、TIP36晶体三极管
TIP36生产厂家：美国得克萨斯仪表公司
TIP36制作材料：Si-PNP
TIP36性质：低频或音频放大 （LF）_功率放大 （L）
TIP36封装形式：直插封装
TIP36极限工作电压：45V
TIP36最大电流允许值：25A
TIP36最大工作频率：<1MHZ或未知
TIP36引脚数：3
TIP36最大耗散功率：125W
TIP36放大倍数：
TIP36图片代号：B-62
TIP36vtest：45
TIP36htest：999900
- TIP36atest：25
TIP36wtest：125
TIP36代换 TIP36用什么型号代替：
TIP36价格
参考价格：￥7.8586
型号：TIP36AG 品牌：ONSemi 备注：这里有TIP36多少钱，2024年最近7天走势，今日出价，今日竞价，TIP36批发/采购报价，TIP36行情走势销售排行榜，TIP36报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TIP36 | POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC MOSPEC |  |   |
TIP36 | Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP35/35A/35B/35C •DCcurrentgainhFE=25(Min)@IC=-1.5A APPLICATIONS •Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | SAVANTIC Savantic, Inc. |  | |
TIP36 | Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP35/35A/35B/35C •DCcurrentgainhFE=25(Min)@IC=-1.5A APPLICATIONS •Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
TIP36 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORTIP35andTIP36seriesdevicesarecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,designedforhighcurrentamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
TIP36 | PNP SILICON POWER TRANSISTORS •DesignedforComplementaryUsewiththeTIP35Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd |  | |
TIP36 | Complementary Silicon Plastic Power Transistor TESTSPECIFICATION ComplementarySiliconPlasticPowerTransistor | FCI Amphenol ICC |  | |
TIP36 | PNP SILICON POWER TRANSISTORS •DesignedforComplementaryUsewiththeTIP35Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
TIP36 | Complementary Silicon Power Transistor 25A/40~100V/125W ComplementarySiliconPowerTransistor 25A/40~100V/125W FEATURES ●ComplementaryNPN-PNPtransistors ●Lowcollector-emittersaturationvoltage ●Satisfactorylinearityoffowardcurrent transferratiohFE ●TO-3Ppackagewhichcanbeinstalled totheheatsinkwithonescrew ●Coll | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | |
TIP36 | SILICON POWER TRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPpowertransistorsmountedinjedecTO-3PN.Theyareintendedforusein generalpurposepoweramplifierandswitchingapplications. NPNcomplementsareTIP35-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor |  | |
TIP36 | COMPLEMENTARY SILICON POWER TRANSISTORS 文件：445.5 Kbytes Page：2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | | |
TIP36 | Silicon PNP Power Transistors 文件：172.28 Kbytes Page：4 Pages | SAVANTIC Savantic, Inc. | | |
TIP36 | 封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 40V 25A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | CentralCentral Semiconductor Corp 美国中央半导体 | | |
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC MOSPEC | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS ComplementarySiliconHigh-PowerTransistors ...forgeneral–purposepoweramplifierandswitchingapplications. •25ACollectorCurrent •LowLeakageCurrent—ICEO=1.0mA@30and60V •ExcellentDCGain—hFE=40Typ@15A •HighCurrentGainBandwidthProduct—hfe=3.0min@I | MotorolaMotorola, Inc 摩托罗拉 |  | | |
COMPLEMENTARY SILICON POWER TRANSISTORS Designedforgeneral−purposepoweramplifierandswitchingapplications. Features •25ACollectorCurrent •LowLeakageCurrent− ICEO=1.0mA@30and60V •ExcellentDCGain− hFE=40Typ@15A •HighCurrentGainBandwidthProduct− |hfe|=3.0min@IC =1.0 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
PNP SILICON POWER TRANSISTORS •DesignedforComplementaryUsewiththeTIP35Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | | |
Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP35/35A/35B/35C •DCcurrentgainhFE=25(Min)@IC=-1.5A APPLICATIONS •Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | SAVANTIC Savantic, Inc. | | | |
Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP35/35A/35B/35C •DCcurrentgainhFE=25(Min)@IC=-1.5A APPLICATIONS •Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORTIP35andTIP36seriesdevicesarecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,designedforhighcurrentamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNP SILICON POWER TRANSISTORS •DesignedforComplementaryUsewiththeTIP35Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
SILICON POWER TRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPpowertransistorsmountedinjedecTO-3PN.Theyareintendedforusein generalpurposepoweramplifierandswitchingapplications. NPNcomplementsareTIP35-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL |  | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC MOSPEC | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS ComplementarySiliconHigh-PowerTransistors ...forgeneral–purposepoweramplifierandswitchingapplications. •25ACollectorCurrent •LowLeakageCurrent—ICEO=1.0mA@30and60V •ExcellentDCGain—hFE=40Typ@15A •HighCurrentGainBandwidthProduct—hfe=3.0min@I | MotorolaMotorola, Inc 摩托罗拉 | | | |
PNP SILICON POWER TRANSISTORS •DesignedforComplementaryUsewiththeTIP35Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | | |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applica | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS DESCRIPTION TheTIP35CisasiliconEpitaxial-BaseNPNtransistormountedinTO-218plasticpackage.Itisintentedforuseinpoweramplifierandswitchingapplications. ThecomplementaryPNPtypeisTIP36C. AlsoTIP36BisaPNPtype. ■STMicroelectronicPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS Designedforgeneral−purposepoweramplifierandswitchingapplications. Features •25ACollectorCurrent •LowLeakageCurrent− ICEO=1.0mA@30and60V •ExcellentDCGain− hFE=40Typ@15A •HighCurrentGainBandwidthProduct− |hfe|=3.0min@IC =1.0 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP35/35A/35B/35C •DCcurrentgainhFE=25(Min)@IC=-1.5A APPLICATIONS •Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | SAVANTIC Savantic, Inc. | | | |
Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP35/35A/35B/35C •DCcurrentgainhFE=25(Min)@IC=-1.5A APPLICATIONS •Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORTIP35andTIP36seriesdevicesarecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,designedforhighcurrentamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNP SILICON POWER TRANSISTORS •DesignedforComplementaryUsewiththeTIP35Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
SILICON POWER TRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPpowertransistorsmountedinjedecTO-3PN.Theyareintendedforusein generalpurposepoweramplifierandswitchingapplications. NPNcomplementsareTIP35-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC MOSPEC | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS ComplementarySiliconHigh-PowerTransistors ...forgeneral–purposepoweramplifierandswitchingapplications. •25ACollectorCurrent •LowLeakageCurrent—ICEO=1.0mA@30and60V •ExcellentDCGain—hFE=40Typ@15A •HighCurrentGainBandwidthProduct—hfe=3.0min@I | MotorolaMotorola, Inc 摩托罗拉 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS Designedforgeneral−purposepoweramplifierandswitchingapplications. Features •25ACollectorCurrent •LowLeakageCurrent− ICEO=1.0mA@30and60V •ExcellentDCGain− hFE=40Typ@15A •HighCurrentGainBandwidthProduct− |hfe|=3.0min@IC =1.0 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
PNP SILICON POWER TRANSISTORS •DesignedforComplementaryUsewiththeTIP35Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | | |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applica | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIOPOWERAMPLIFIERDCTODCCONVERTER ●HighCurrentCapability ●HighPowerDissipation ●ComplementarytoTIP35C | WINGSWing Shing Computer Components Wing Shing Computer Components |  | | |
TRIPLE DIFFUSED PNP TRANSISTOR(HIGH POWER AMPLIFIER) HIGHPOWERAMPLIFIERAPPLICATION. FEATURES •Recommendedfor75WAudioFrequency AmplifierOutputStage. •ComplementarytoTIP35C. •Icmax:-25A. | KECKEC CORPORATION KEC株式会社 |  | | |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS DESCRIPTION TheTIP35CisasiliconEpitaxial-BaseNPNtransistormountedinTO-218plasticpackage.Itisintentedforuseinpoweramplifierandswitchingapplications. ThecomplementaryPNPtypeisTIP36C. AlsoTIP36BisaPNPtype. ■STMicroelectronicPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP35/35A/35B/35C •DCcurrentgainhFE=25(Min)@IC=-1.5A APPLICATIONS •Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | SAVANTIC Savantic, Inc. | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORTIP35andTIP36seriesdevicesarecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,designedforhighcurrentamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
PNP SILICON POWER TRANSISTORS •DesignedforComplementaryUsewiththeTIP35Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Audio amplifier FEATURES ●Highcollectorvoltage：VCEO=100V(min) ●Lowcollector-emittersaturationvoltage ●ComplementarytoTIP35C ●RoHSproduct APPLICATIONS ●Audioamplifier ●Generalpurpose | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. |  | | |
Silicon PNP Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP35/35A/35B/35C •DCcurrentgainhFE=25(Min)@IC=-1.5A APPLICATIONS •Designedforuseingeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary Silicon High Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd |  | | |
SILICON POWER TRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPpowertransistorsmountedinjedecTO-3PN.Theyareintendedforusein generalpurposepoweramplifierandswitchingapplications. NPNcomplementsareTIP35-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor | | | |
Silicon PNP transistor in a TO-3P Plastic Package. Descriptions SiliconPNPtransistorinaTO-3PPlasticPackage. Features Lowleakagecurrent,highcurrentgainbandwidthproduct,ComplementarytoTIP35C. Applications Amplifierandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
HIGH POWER TRANSISTORS DESCRIPTION TheUTCTIP36CisaPNPExpitaxial-Basetransistor,designedforusingingeneralpurposeamplifierandswitchingapplications.ComplementtoTIP35C. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS DESCRIPTION TheTIP35CisasiliconEpitaxial-BaseNPNtransistormountedinTO-218plasticpackage.Itisintentedforuseinpoweramplifierandswitchingapplications. ThecomplementaryPNPtypeisTIP36C. AlsoTIP36BisaPNPtype. ■STMicroelectronicPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
TRIPLE DIFFUSED PNP TRANSISTOR HIGHPOWERAMPLIFIERAPPLICATION. FEATURES •Recommendedfor75WAudioFrequencyAmplifierOutputStage. •ComplementarytoTIP35CA. •Icmax:-25A. | KECKEC CORPORATION KEC株式会社 | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
Audio amplifier FEATURES ●Highcollectorvoltage：VCEO=100V(min) ●Lowcollector-emittersaturationvoltage ●ComplementarytoTIP35C ●RoHSproduct APPLICATIONS ●Audioamplifier ●Generalpurpose | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. | | | |
Complementary power transistors Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
HIGH POWER TRANSISTORS DESCRIPTION TheUTCTIP36CisaPNPExpitaxial-Basetransistor,designedforusingingeneralpurposeamplifierandswitchingapplications.ComplementtoTIP35C. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
TIP36产品属性
- 类型
描述
- 型号
TIP36
- 制造商
Bourns Inc
- 功能描述
PNP TRANSISTOR 40V 25A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
23+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST |
2020+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ONSEMICONDUCTOR |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
|||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
ST |
23+ |
TO-247 |
6000 |
全新原装现货、诚信经营! |
|||
ST |
TO-218 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
OTHER/其它 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
|||
ST/意法 |
21+ |
TO-247 |
22800 |
只做原装,质量保证 |
|||
ST |
23+ |
TO-247 |
5800 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
9231 |
30 |
公司优势库存 热卖中! |
TIP36芯片相关品牌
TIP36规格书下载地址
TIP36参数引脚图相关
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TIP36数据表相关新闻
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