POWER TRANSISTORS(25A,40-100V,125W)

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40 A Peak Collector Current • Customer-Specified Selections Available

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applica

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Also TIP36B is a PNP type. ■ STMicroelectronic PREFERRED SALESTYPES

COMPLEMENTARY SILICON POWER TRANSISTORS

Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

Silicon PNP Power Transistors

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封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 80V 25A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

COMPLEMENTARY SILICON POWER TRANSISTORS

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Complementary Silicon High?뭁ower Transistors

文件：86.13 Kbytes Page：6 Pages

三极管(BJT)

Trans GP BJT PNP 80V 25A 3-Pin(3+Tab) TO-218 Rail

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

Complementary Silicon High?뭁ower Transistors

文件：86.13 Kbytes Page：6 Pages

Complementary Silicon High-Power Transistors

文件：137.24 Kbytes Page：8 Pages

封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP 80V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个