POWER TRANSISTORS(25A,40-100V,125W)

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I

COMPLEMENTARY SILICON POWER TRANSISTORS

Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40 A Peak Collector Current • Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP35/35A/35B/35C • DC current gain hFE=25(Min)@IC=-1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

• Designed for Complementary Use with the TIP35 Series • 125 W at 25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP35-A-B-C Compliance to RoHS.

Complementary Silicon High?뭁ower Transistors

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Silicon PNP Power Transistors

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封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 60V 25A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Trans GP BJT PNP 60V 40A 3-Pin(3+Tab) TO-218 Box

Transistor

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

isc Silicon PNP Power Transistor

文件：259.2 Kbytes Page：2 Pages

isc Silicon PNP Power Transistor

文件：269.37 Kbytes Page：2 Pages

Complementary Silicon High?뭁ower Transistors

文件：86.13 Kbytes Page：6 Pages

Complementary Silicon High-Power Transistors

文件：137.24 Kbytes Page：8 Pages

封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP 60V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon PNP Power Transistor

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