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TIP35晶体管资料
TIP35别名：TIP35三极管、TIP35晶体管、TIP35晶体三极管
TIP35生产厂家：美国得克萨斯仪表公司
TIP35制作材料：Si-NPN
TIP35性质：低频或音频放大 （LF）_功率放大 （L）
TIP35封装形式：直插封装
TIP35极限工作电压：45V
TIP35最大电流允许值：25A
TIP35最大工作频率：<1MHZ或未知
TIP35引脚数：3
TIP35最大耗散功率：125W
TIP35放大倍数：
TIP35图片代号：B-62
TIP35vtest：45
TIP35htest：999900
- TIP35atest：25
TIP35wtest：125
TIP35代换 TIP35用什么型号代替：
TIP35价格
参考价格：￥7.5676
型号：TIP35AG 品牌：ON 备注：这里有TIP35多少钱，2024年最近7天走势，今日出价，今日竞价，TIP35批发/采购报价，TIP35行情走势销售排行榜，TIP35报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TIP35 | Complementary Silicon Plastic Power Transistor TESTSPECIFICATION ComplementarySiliconPlasticPowerTransistor | FCI Amphenol ICC |  |   |
TIP35 | NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS •DesignedforComplementaryUsewiththeTIP36Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
TIP35 | POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC MOSPEC |  | |
TIP35 | NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe TIP36Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd |  | |
TIP35 | Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP36/36A/36B/36C •DCcurrentgainhFE=25(Min)@IC=1.5A APPLICATIONS •Designedforuseingeneralpurpose poweramplifierandswitchingapplications. | SAVANTIC Savantic, Inc. |  | |
TIP35 | Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP36/36A/36B/36C •DCcurrentgainhFE=25(Min)@IC=1.5A APPLICATIONS •Designedforuseingeneralpurpose poweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
TIP35 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORTIP35andTIP36seriesdevicesarecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,designedforhighcurrentamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 |  | |
TIP35 | SILICON POWER TRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPpowertransistorsmountedinjedecTO-3PN.Theyareintendedforuseingeneralpurposepoweramplifierandswitchingapplications. PNPcomplementsareTIP36-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor |  | |
TIP35 | Complementary Silicon Power Transistor 25A/40~100V/125W ComplementarySiliconPowerTransistor 25A/40~100V/125W FEATURES ●ComplementaryNPN-PNPtransistors ●Lowcollector-emittersaturationvoltage ●Satisfactorylinearityoffowardcurrent transferratiohFE ●TO-3Ppackagewhichcanbeinstalled totheheatsinkwithonescrew ●Coll | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 |  | |
TIP35 | COMPLEMENTARY SILICON POWER TRANSISTORS 文件：445.5 Kbytes Page：2 Pages | CentralCentral Semiconductor Corp 美国中央半导体 | | |
TIP35 | Designed for Complementary Use with the TIP36 Series 文件：109.08 Kbytes Page：4 Pages | BournsBourns Inc. 伯恩斯（邦士） |  | |
TIP35 | Silicon NPN Power Transistors 文件：171.62 Kbytes Page：4 Pages | SAVANTIC Savantic, Inc. | | |
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC MOSPEC | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS ComplementarySiliconHigh-PowerTransistors ...forgeneral–purposepoweramplifierandswitchingapplications. •25ACollectorCurrent •LowLeakageCurrent—ICEO=1.0mA@30and60V •ExcellentDCGain—hFE=40Typ@15A •HighCurrentGainBandwidthProduct—hfe=3.0min@I | MotorolaMotorola, Inc 摩托罗拉 |  | | |
COMPLEMENTARY SILICON POWER TRANSISTORS Designedforgeneral−purposepoweramplifierandswitchingapplications. Features •25ACollectorCurrent •LowLeakageCurrent− ICEO=1.0mA@30and60V •ExcellentDCGain− hFE=40Typ@15A •HighCurrentGainBandwidthProduct− |hfe|=3.0min@IC =1.0 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe TIP36Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | | |
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP36/36A/36B/36C •DCcurrentgainhFE=25(Min)@IC=1.5A APPLICATIONS •Designedforuseingeneralpurpose poweramplifierandswitchingapplications. | SAVANTIC Savantic, Inc. | | | |
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP36/36A/36B/36C •DCcurrentgainhFE=25(Min)@IC=1.5A APPLICATIONS •Designedforuseingeneralpurpose poweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORTIP35andTIP36seriesdevicesarecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,designedforhighcurrentamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
SILICON POWER TRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPpowertransistorsmountedinjedecTO-3PN.Theyareintendedforuseingeneralpurposepoweramplifierandswitchingapplications. PNPcomplementsareTIP36-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor | | | |
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS •DesignedforComplementaryUsewiththeTIP36Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL |  | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC MOSPEC | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS ComplementarySiliconHigh-PowerTransistors ...forgeneral–purposepoweramplifierandswitchingapplications. •25ACollectorCurrent •LowLeakageCurrent—ICEO=1.0mA@30and60V •ExcellentDCGain—hFE=40Typ@15A •HighCurrentGainBandwidthProduct—hfe=3.0min@I | MotorolaMotorola, Inc 摩托罗拉 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS Designedforgeneral−purposepoweramplifierandswitchingapplications. Features •25ACollectorCurrent •LowLeakageCurrent− ICEO=1.0mA@30and60V •ExcellentDCGain− hFE=40Typ@15A •HighCurrentGainBandwidthProduct− |hfe|=3.0min@IC =1.0 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe TIP36Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | | |
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP36/36A/36B/36C •DCcurrentgainhFE=25(Min)@IC=1.5A APPLICATIONS •Designedforuseingeneralpurpose poweramplifierandswitchingapplications. | SAVANTIC Savantic, Inc. | | | |
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP36/36A/36B/36C •DCcurrentgainhFE=25(Min)@IC=1.5A APPLICATIONS •Designedforuseingeneralpurpose poweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORTIP35andTIP36seriesdevicesarecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,designedforhighcurrentamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
SILICON POWER TRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPpowertransistorsmountedinjedecTO-3PN.Theyareintendedforuseingeneralpurposepoweramplifierandswitchingapplications. PNPcomplementsareTIP36-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor | | | |
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS •DesignedforComplementaryUsewiththeTIP36Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC MOSPEC | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS ComplementarySiliconHigh-PowerTransistors ...forgeneral–purposepoweramplifierandswitchingapplications. •25ACollectorCurrent •LowLeakageCurrent—ICEO=1.0mA@30and60V •ExcellentDCGain—hFE=40Typ@15A •HighCurrentGainBandwidthProduct—hfe=3.0min@I | MotorolaMotorola, Inc 摩托罗拉 | | | |
COMPLEMENTARY SILICON POWER TRANSISTORS Designedforgeneral−purposepoweramplifierandswitchingapplications. Features •25ACollectorCurrent •LowLeakageCurrent− ICEO=1.0mA@30and60V •ExcellentDCGain− hFE=40Typ@15A •HighCurrentGainBandwidthProduct− |hfe|=3.0min@IC =1.0 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS ●DesignedforComplementaryUsewiththe TIP36Series ●125Wat25°CCaseTemperature ●25AContinuousCollectorCurrent ●40APeakCollectorCurrent ●Customer-SpecifiedSelectionsAvailable | POINNPower Innovations Ltd Power Innovations Ltd | | | |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applica | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | | |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIOPOWERAMPLIFIER DCTODCCONVERTER ●HighCurrentCapability ●HighPowerDissipation ●ComplementarytoTIP36C | WINGSWing Shing Computer Components Wing Shing Computer Components |  | | |
TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER) HIGHPOWERAMPLIFIERAPPLICATION. FEATURES •Recommendedfor75WAudioFrequency AmplifierOutputStage. •ComplementarytoTIP36C. •Icmax:25A. | KECKEC CORPORATION KEC株式会社 |  | | |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS DESCRIPTION TheTIP35CisasiliconEpitaxial-BaseNPNtransistormountedinTO-218plasticpackage.Itisintentedforuseinpoweramplifierandswitchingapplications. ThecomplementaryPNPtypeisTIP36C. AlsoTIP36BisaPNPtype. ■STMicroelectronicPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP36/36A/36B/36C •DCcurrentgainhFE=25(Min)@IC=1.5A APPLICATIONS •Designedforuseingeneralpurpose poweramplifierandswitchingapplications. | SAVANTIC Savantic, Inc. | | | |
Silicon NPN Power Transistors DESCRIPTION •WithTO-3PNpackage •ComplementtotypeTIP36/36A/36B/36C •DCcurrentgainhFE=25(Min)@IC=1.5A APPLICATIONS •Designedforuseingeneralpurpose poweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary Silicon High Power Ttransistors DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications. | TGS Tiger Electronic Co.,Ltd |  | | |
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORTIP35andTIP36seriesdevicesarecomplementarysiliconpowertransistorsmanufacturedbytheepitaxialbaseprocess,designedforhighcurrentamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | | | |
The TIP35C is a silicon Epitaxial-Base NPNSILICONPOWERTRANSISTORS •DesignedforComplementaryUsewiththeTIP36Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
Silicon NPN transistor in a TO-3P Plastic Package. Descriptions SiliconNPNtransistorinaTO-3PPlasticPackage. Features Lowleakagecurrent,highcurrentgainbandwidthproduct, ComplementarytoTIP36C. Applications Poweramplifierandswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | | |
Silicon PNP Power Transistor SiliconPNPPowerTransistor | KISEMICONDUCTORKwang Myoung I.S. CO.,LTD 明阳国际贸易广州市明阳国际贸易有限公司 |  | | |
Audio amplifier FEATURES ●Highcollectorvoltage：VCEO=100V(min) ●Lowcollector-emittersaturationvoltage ●ComplementarytoTIP36C ●RoHSproduct APPLICATIONS ●Audioamplifier ●Generalpurpose | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. JSMCJILIN SINO-MICROELECTRONICS CO., LTD. |  | | |
SILICON POWER TRANSISTORS SILICONPOWERTRANSISTORS TheyarePNPpowertransistorsmountedinjedecTO-3PN.Theyareintendedforuseingeneralpurposepoweramplifierandswitchingapplications. PNPcomplementsareTIP36-A-B-C CompliancetoRoHS. | COMSET Comset Semiconductor | | | |
HIGH POWER TRANSISTORS DESCRIPTION TheUTCTIP35CisaNPNExpitaxial-Basetransistor,designedforusingingeneralpurposeamplifierandswitchingapplications.ComplementtoTIP36C. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
NPN SILICON POWER TRANSISTORS NPNSILICONPOWERTRANSISTORS •DesignedforComplementaryUsewiththeTIP36Series •125Wat25°CCaseTemperature •25AContinuousCollectorCurrent •40APeakCollectorCurrent •Customer-SpecifiedSelectionsAvailable | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
TRIPLE DIFFUSED NPN TRANSISTOR HIGHPOWERAMPLIFIERAPPLICATION. FEATURES •Recommendedfor75WAudioFrequency •AmplifierOutputStage. •ComplementarytoTIP36CA. •Icmax:25A. | KECKEC CORPORATION KEC株式会社 | | | |
Silicon NPN Power Transistor DESCRIPTION ·DCCurrentGain- :hFE=25(Min)@IC=1.5A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=100V(Min) ·ComplementtoTypeTIP36CF ·CurrentGain-BandwidthProduct- :fT=3.0MHz(Min)@IC=1.0A APPLICATIONS ·Designedforuseingeneralpurposepower | KISEMICONDUCTORKwang Myoung I.S. CO.,LTD 明阳国际贸易广州市明阳国际贸易有限公司 | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
isc Silicon NPN Power Transistor DESCRIPTION ·DCCurrentGain- :hFE=25(Min)@IC=1.5A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=100V(Min) ·ComplementtoTypeTIP36CF ·CurrentGain-BandwidthProduct- :fT=3.0MHz(Min)@IC=1.0A APPLICATIONS ·Designedforuseingeneralpurposepower | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
POWER TRANSISTORS ForGeneralPurposePowerAmplifierandSwitchingApplications. | CDIL CDIL | | | |
Complementary power transistors Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layout.Theresultingtransistorsshowexceptionalhighgainperformancecoupledwithverylowsaturationvoltage. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
HIGH POWER TRANSISTORS DESCRIPTION TheUTCTIP35CisaNPNExpitaxial-Basetransistor,designedforusingingeneralpurposeamplifierandswitchingapplications.ComplementtoTIP36C. | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
TIP35产品属性
- 类型
描述
- 型号
TIP35
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY TRANSISTOR TO-218AC NPN 40V 25A 125W BCE
- 制造商
Bourns Inc
- 功能描述
NPN TRANSISTOR 40V 25A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
ST(意法半导体) |
23+ |
TO-247 |
928 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
PH |
2020+ |
TO-3P |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
ST |
21+ |
TO-247 |
3000 |
全新原装公司现货
|
|||
ST/意法 |
21+ |
NA |
14910 |
只做原装,假一罚十 |
|||
onsemi(安森美) |
23+ |
TO-247-3 |
10000 |
只做原装 假一赔万 |
|||
ST |
TO220 |
36900 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ST/意法 |
21+ |
TO-247-3 |
50000 |
只做原装 |
|||
PECOR |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
|||
TI |
23+ |
TO-3P |
3000 |
专做原装正品,假一罚百! |
TIP35芯片相关品牌
TIP35规格书下载地址
TIP35参数引脚图相关
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TIP35数据表相关新闻
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