TIP35晶体管资料
TIP35别名：TIP35三极管、TIP35晶体管、TIP35晶体三极管
TIP35生产厂家：美国得克萨斯仪表公司
TIP35制作材料：Si-NPN
TIP35性质：低频或音频放大 （LF）_功率放大 （L）
TIP35封装形式：直插封装
TIP35极限工作电压：45V
TIP35最大电流允许值：25A
TIP35最大工作频率：<1MHZ或未知
TIP35引脚数：3
TIP35最大耗散功率：125W
TIP35放大倍数：
TIP35图片代号：B-62
TIP35vtest：45
TIP35htest：999900
- TIP35atest：25
TIP35wtest：125
TIP35代换 TIP35用什么型号代替：
TIP35价格
参考价格：￥7.5676
型号：TIP35AG 品牌：ON 备注：这里有TIP35多少钱，2026年最近7天走势，今日出价，今日竞价，TIP35批发/采购报价，TIP35行情走势销售排行榜，TIP35报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TIP35 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. | CENTRAL |   | |
TIP35 | Complementary Silicon Plastic Power Transistor TEST SPECIFICATION Complementary Silicon Plastic Power Transistor | FCI 富加宜 | | |
TIP35 | POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC 统懋 | | |
TIP35 | SILICON POWER TRANSISTORS SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS. | COMSET | | |
TIP35 | Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications. | ISC 无锡固电 | | |
TIP35 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
TIP35 | NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | |
TIP35 | Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications. | SAVANTIC | | |
TIP35 | Complementary Silicon Power Transistor 25A/40~100V/125W Complementary Silicon Power Transistor 25A/40~100V/125W FEATURES ● Complementary NPN-PNP transistors ● Low collector-emitter saturation voltage ● Satisfactory linearity of foward current transfer ratio hFE ● TO-3P package which can be installed to the heat sink with one screw ● Coll | NELLSEMI 尼尔半导体 | | |
TIP35 | Silicon NPN Power Transistors 文件：171.62 Kbytes Page：4 Pages | SAVANTIC | | |
TIP35 | Trans GP BJT NPN 40V 40A 3-Pin(3+Tab) TO-218 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
TIP35 | Power Managemant | FCI 富加宜 | | |
TIP35 | Transistor | COMSET | | |
TIP35 | COMPLEMENTARY SILICON POWER TRANSISTORS 文件：445.5 Kbytes Page：2 Pages | CENTRAL | | |
TIP35 | Designed for Complementary Use with the TIP36 Series 文件：109.08 Kbytes Page：4 Pages | BOURNS 伯恩斯 | | |
COMPLEMENTARY SILICON POWER TRANSISTORS Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0 | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC 统懋 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. | CENTRAL | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications. | ISC 无锡固电 | | ||
SILICON POWER TRANSISTORS SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS. | COMSET | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I | MOTOROLA 摩托罗拉 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications. | SAVANTIC | | ||
POWER TRANSISTORS For General Purpose Power Amplifier and Switching Applications. | CDIL | | ||
POWER TRANSISTORS For General Purpose Power Amplifier and Switching Applications. | CDIL | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0 | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. | CENTRAL | | ||
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC 统懋 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I | MOTOROLA 摩托罗拉 | | ||
SILICON POWER TRANSISTORS SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS. | COMSET | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications. | SAVANTIC | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
POWER TRANSISTORS For General Purpose Power Amplifier and Switching Applications. | CDIL | | ||
POWER TRANSISTORS For General Purpose Power Amplifier and Switching Applications. | CDIL | | ||
HIGH POWER TRANSISTORS DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C. | UTC 友顺 | | ||
TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER) HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP36C. • Icmax:25A. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0 | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I | MOTOROLA 摩托罗拉 | | ||
SILICON POWER TRANSISTORS SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS. | COMSET | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications. | ISC 无锡固电 | | ||
POWER TRANSISTORS(25A,40-100V,125W)
| MOSPEC 统懋 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications. | CENTRAL | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available | POINN | | ||
NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
The TIP35C is a silicon Epitaxial-Base NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications. | SAVANTIC | | ||
Audio amplifier FEATURES ● High collector voltage：VCEO=100V (min) ● Low collector-emitter saturation voltage ● Complementary to TIP36C ● RoHS product APPLICATIONS ● Audio amplifier ● General purpose | JSMCJILIN SINO-MICROELECTRONICS CO., LTD. 华微电子吉林华微电子股份有限公司 | | ||
Complementary Silicon High Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. | TGS | | ||
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to TIP36C | WINGS 永盛电子 | | ||
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applica | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Also TIP36B is a PNP type. ■ STMicroelectronic PREFERRED SALESTYPES | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN transistor in a TO-3P Plastic Package. Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features Low leakage current, high current gain bandwidth product, Complementary to TIP36C. Applications Power amplifier and switching applications. | FOSHAN 蓝箭电子 | | ||
Silicon PNP Power Transistor Silicon PNP Power Transistor | KISEMICONDUCTOR | | ||
TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency • Amplifier Output Stage. • Complementary to TIP36CA. • Icmax:25A. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | ||
POWER TRANSISTORS For General Purpose Power Amplifier and Switching Applications. | CDIL | | ||
Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP36CF ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A APPLICATIONS ·Designed for use in general purpose power | KISEMICONDUCTOR | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP36CF ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A APPLICATIONS ·Designed for use in general purpose power | ISC 无锡固电 | |
TIP35产品属性
- 类型
描述
- VCBO (V)：
40
- VCEO (V)：
40
- PD (W)：
125
- PACKAGE：
TO-3P
- NPN：
TIP35
- PNP：
TIP36
- HFE (Min/Max)：
15/75
- IC/VCE (A/V)：
15/4.0
- VCE(SAT) (V)：
4.0
- IC / IB (A/mA)：
25/5.0A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
25+ |
TO-247 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST/意法 |
21+ |
TO-247 |
22800 |
只做原装,质量保证 |
|||
ST/意法 |
2025+ |
TO247-3 |
5000 |
原装进口,免费送样品! |
|||
STE |
26+ |
TO-3P |
12328 |
原装正品价格优惠,长期优势供应 |
|||
ST进口原 |
24+ |
TO-3P |
6000 |
原装正品,欢迎咨询 |
|||
ST/意法 |
25+ |
TO-247 |
32000 |
ST/意法全新特价TIP35C即刻询购立享优惠#长期有货 |
|||
STM |
19+/22+ |
13890 |
TO-3P |
||||
ST |
21+ |
TO-247 |
3000 |
全新原装公司现货
|
|||
ST/意法 |
2021+ |
TO-247-3 |
9000 |
原装现货,随时欢迎询价 |
|||
ST |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
TIP35规格书下载地址
TIP35参数引脚图相关
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- TIP35F
- TIP35E
- TIP35D
- TIP35CW
- TIP35CP
- TIP35CG
- TIP35CF
- TIP35CA
- TIP35C
- TIP35BG
- TIP35BF
- TIP35B
- TIP35AT
- TIP35AG
- TIP35AF
- TIP35AB
- TIP35A
- TIP35-6
- TIP34F
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- TIP34CF
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- TIP34A
- TIP34
- TIP33F
- TIP33E
- TIP33D
- TIP33CG
- TIP33CF
- TIP33C
- TIP33BF
- TIP33B
- TIP33AG
- TIP33AF
- TIP33
- TIP32F
- TIP32E
- TIP32D
- TIP32C
- TIP32B
- TIP32A
- TIP32
TIP35数据表相关新闻
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