COMPLEMENTARY SILICON POWER TRANSISTORS

Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0

HIGH POWER TRANSISTORS

DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.

TRIPLE DIFFUSED NPN TRANSISTOR(HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency Amplifier Output Stage. • Complementary to TIP36C. • Icmax:25A.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Audio amplifier

FEATURES ● High collector voltage：VCEO=100V (min) ● Low collector-emitter saturation voltage ● Complementary to TIP36C ● RoHS product APPLICATIONS ● Audio amplifier ● General purpose

The TIP35C is a silicon Epitaxial-Base

NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Complementary Silicon High Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to TIP36C

POWER TRANSISTORS(25A,40-100V,125W)

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applica

COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The TIP35C is a silicon Epitaxial-Base NPN transistor mounted in TO-218 plastic package. It is intented for use in power amplifier and switching applications. The complementary PNP type is TIP36C. Also TIP36B is a PNP type. ■ STMicroelectronic PREFERRED SALESTYPES

Silicon NPN transistor in a TO-3P Plastic Package.

Descriptions Silicon NPN transistor in a TO-3P Plastic Package. Features Low leakage current, high current gain bandwidth product, Complementary to TIP36C. Applications Power amplifier and switching applications.

Silicon PNP Power Transistor

Silicon PNP Power Transistor

25 A，100 V，NPN 双极功率晶体管

The Bipolar Power Transistor is designed for general purpose power amplifier and switching applications. The TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) are complementary devices. • 25 A Collector Current\n• Low Leakage Current ICEO = 1.0 mA @ 30 and 60 V\n• Excellent DC Gain hFE = 40 Typ @ 15 A\n• High Current Gain Bandwidth Product-\n• Pb-Free Packages are Available;

Designed for Complementary Use with the TIP36 Series

文件：109.08 Kbytes Page：4 Pages

Complementary power transistors

文件：200.03 Kbytes Page：9 Pages

封装/外壳：TO-218-3 包装：散装 描述：TRANS NPN 100V 25A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-218-3 包装：散装 描述：TRANS NPN 100V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

100V,25A,Medium Power NPN Bipolar Transistor

Bipolar Transistor

Silicon NPN Power Transistors

文件：171.62 Kbytes Page：4 Pages

COMPLEMENTARY SILICON POWER TRANSISTORS

文件：445.5 Kbytes Page：2 Pages

TRIPLE DIFFUSED NPN TRANSISTOR

文件：294.85 Kbytes Page：2 Pages

Complementary Silicon High?뭁ower Transistors

文件：86.13 Kbytes Page：6 Pages

TRIPLE DIFFUSED NPN TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Recommended for 75W Audio Frequency • Amplifier Output Stage. • Complementary to TIP36CA. • Icmax:25A.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

isc Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP36CF ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A APPLICATIONS ·Designed for use in general purpose power

Silicon NPN Power Transistor

DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·Complement to Type TIP36CF ·Current Gain-Bandwidth Product- : fT= 3.0MHz(Min)@IC= 1.0A APPLICATIONS ·Designed for use in general purpose power

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

Complementary power transistors

Description The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN-PNP transistors

HIGH POWER TRANSISTORS

DESCRIPTION The UTC TIP35C is a NPN Expitaxial-Base transistor, designed for using in general purpose amplifier and switching applications. Complement to TIP36C.

Complementary Silicon High Power Transistors

Description The dev ice i s a s ilicon E pitaxial-Base NPN transistor mounted i n TO-247 plastic pac kage. It is i ntentend for u se i n p ower am plifier and switching applications. The complementary PNP type is TIP36CW. Features ■ STMicroelectronics PREFERRED SALESTYPES

TRIPLE DIFFUSED NPN TRANSISTOR

文件：294.85 Kbytes Page：2 Pages

Complementary power transistors

文件：200.03 Kbytes Page：9 Pages

TRIPLE DIFFUSED NPN TRANSISTOR

文件：294.85 Kbytes Page：2 Pages

HIGH POWER TRANSISTORS

文件：143.99 Kbytes Page：4 Pages

TRIPLE DIFFUSED NPN TRANSISTOR

文件：445.81 Kbytes Page：2 Pages

Complementary Silicon High?뭁ower Transistors

文件：86.13 Kbytes Page：6 Pages

Complementary Silicon High-Power Transistors

文件：137.24 Kbytes Page：8 Pages

HIGH POWER TRANSISTORS

文件：143.99 Kbytes Page：4 Pages

HIGH POWER TRANSISTORS

文件：143.99 Kbytes Page：4 Pages

HIGH POWER TRANSISTORS

文件：143.99 Kbytes Page：4 Pages

HIGH POWER TRANSISTORS

文件：143.99 Kbytes Page：4 Pages