POWER TRANSISTORS(25A,40-100V,125W)

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 25 A Collector Current • Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain — hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ I

COMPLEMENTARY SILICON POWER TRANSISTORS

Designed for general−purpose power amplifier and switching applications. Features • 25 A Collector Current • Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V • Excellent DC Gain − hFE = 40 Typ @ 15 A • High Current Gain Bandwidth Product − |hfe| = 3.0 min @ IC = 1.0

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP36 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP36/36A/36B/36C • DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP35 and TIP36 series devices are complementary silicon power transistors manufactured by the epitaxial base process, designed for high current amplifier and switching applications.

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. PNP complements are TIP36-A-B-C Compliance to RoHS.

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS • Designed forComplementary Use with the TIP36 Series • 125 Wat25°C Case Temperature • 25 A Continuous Collector Current • 40A Peak Collector Current • Customer-Specified Selections Available

封装/外壳：TO-218-3 包装：散装 描述：TRANS NPN 80V 25A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT NPN 80V 40A 3-Pin(3+Tab) TO-218 Box

Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Transistor

Designed for Complementary Use with the TIP36 Series

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COMPLEMENTARY SILICON POWER TRANSISTORS

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Silicon NPN Power Transistors

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Complementary Silicon High?뭁ower Transistors

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POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS

For General Purpose Power Amplifier and Switching Applications.

Complementary Silicon High?뭁ower Transistors

文件：86.13 Kbytes Page：6 Pages

Complementary Silicon High-Power Transistors

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封装/外壳：TO-218-3 包装：管件 描述：TRANS NPN 80V 25A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个