PNP (HIGH DC CURRENT GAIN)

HIGH DC CURRENT GAIN MIN hFE=1000@ VCE = -4V, IC= -5A Monolithic Construction With Built In Base-Emitter Shunt Resistors Industrial Use Complement to TIP140F/141F/142F

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

SILICON PLANAR DARLINGTON POWER TRANSISTORS

SILICON PLANAR DARLINGTON POWER TRANSISTORS For use in Power Linear and Switching Applications

Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140F/141F/142F

PNP外延达林顿晶体管

• 具有内置基极-发射极分流电阻的单片架构\n•高DC电流增益：hFE=1000 @ VCE= -4 V, IC= -5 A (Min.)\n•工业用途\n•TIP140F/141F/142F的补充器件;

封装/外壳：TO-3P-3 整包 包装：管件 描述：TRANS PNP DARL 100V 10A TO3PF 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER TRANSISTORS(10A,60-100V,125W)

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140,

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS

SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state–of–the–art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. T

Wide Bandwidth Quad JFET Input Operational Amplifiers

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