MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.0dBm at 13.75GHz to 14.5GHz ･HIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

13.75-14.5GHz, 8W Internally Matched Power FET

13.75-14.5GHz, 8W Internally Matched Power FET • 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • HIGH PAE(25 TYPICAL) • +39dBm TYPICAL P1dB OUTPUT POWER • 7.0dB TYPICAL G1dB POWER GAIN • NON-HERMETIC METAL FLANGE PACKAGE

13.75-14.5 GHz 8-Watt Internally Matched Power FET

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X, Ku-Band Internally Matched FET

文件：302.12 Kbytes Page：4 Pages