SILICON CONTROLLED RECTIFIERS

SILICON CONTROLLED RECTIFIERS ● 5 A Continuous On-State Current ● 20 A Surge-Current ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 1 mA

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS • 5 A Continuous On-State Current • 20 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 1 mA • Compliance to ROHS

Thyristor

THYRISTOR SCR 400V 5A

封装/外壳：TO-220-3 包装：散装 描述：SCR 400V 5A TO220 分立半导体产品 晶闸管 - SCR

200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL

Logic Level TMOS N–Channel Enhancement Mode This TMOS FET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic, microprocessor or TTL to high voltage interface and high voltage display drivers. • Low Drive Requirement, VGS = 3

HIGH EFFICIENCY RECTIFIERS(1.0A,600-1000V)

Switchmode Power Rectifiers . . . Designed for use in switching power supplies. These state-of-the-art devices have the fllowing features: * High Surge Capacity * Low Power Loss, High efficiency. * Glass Passivated chip junctions * 150°C Operating Junction Temperature * Low Stored Charge

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages

Operational Amplifiers

文件：158.28 Kbytes Page：8 Pages