NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA o High Transition Frequency fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

NPN SiGe RF TRANSISTOR

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA o High Transition Frequency fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Gain MAG = 11.5 dB at f = 1 GHz, VCE = 10 V, IC = 20 mA o High Transition Frequency fT = 7 GHz at f = 1 GHz, VCE = 10 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA o High Transition Frequency fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA o High Transition Frequency fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.0 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Power Gain MAG = 15 dB at f = 1 GHz, VCE = 3 V, IC = 7 mA o High Transition Frequency fT = 9 GHz at VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA o High Power Gain MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA o High Transition Frequency fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mA □ Application LNA and wide band amplifier up to GHz range

SiGe NPN Transistor

SiGe NPN Transistor

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