37 - 40 GHz 1W Power Amplifier

General Description The TriQuint TGA4542 is a 37 - 40 GHz Power Amplifier designed using TriQuint’s power pHEMT production process. The TGA4542 typically provides 31.5 dBm of output power at 1dB gain compression with small signal gain of 26 dB. Third Order Intercept is 38 dBm at 18 dBm Outpu

37 - 40 GHz Power Amplifier

Qorvo's TGA4542 is a 37 - 40 GHz Power Amplifier designed using Qorvo's power pHEMT production process.\nThe TGA4542 typically provides 31.5 dBm of output power at 1dB gain compression with small signal gain of 26 dB. Third Order Intercept is 38 dBm at 18 dBm Output/Tone.\nThe TGA4542 is ideally sui • Frequency range: 37 - 40 GHz\n• Output power: 32.5 dBm Psat, 31.5 dBm P1dB\n• Gain: 26 dBm Typical\n• TOI: 38 dBm @ 18 dBm output/tone\n• Integrated power detector\n• Bias: Vcc = 6V, Icc = 900 mA typical\n• Dimension: 2.95 x 2.95 x 0.1 mm;

37 to 40 GHz 1W Power Amplifier

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37 to 40 GHz 1W Power Amplifier

文件：1.09431 Mbytes Page：13 Pages

Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches

The MAX4541–MAX4544 are precision, dual analog switches designed to operate from a single +2.7V to +12V supply. Low power consumption (5µW) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON= 150ns max, tOFF=

Low-Voltage, Single-Supply Dual SPST/SPDT Analog Switches

The MAX4541–MAX4544 are precision, dual analog switches designed to operate from a single +2.7V to +12V supply. Low power consumption (5µW) makes these parts ideal for battery-powered equipment. These switches offer low leakage currents (100pA max) and fast switching speeds (tON= 150ns max, tOFF=

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS

30V Complementary PowerTrench MOSFET

General Description This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features • Q1: N-Channel 6 A, 30 V RDS