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型号 功能描述 生产厂家 企业 LOGO 操作
TFF4N60

N-Channel Power MOSFET 4.1A, 600V, 2.5廓

文件:337.26 Kbytes Page:8 Pages

TAK_CHEONG

德昌电子

TFF4N60

N-Channel Power MOSFET 4.1A, 600V, 2.5Ω

TAKCHEONG

德昌电子

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

ONSEMI

安森美半导体

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

MOTOROLA

摩托罗拉

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

ONSEMI

安森美半导体

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

PowerMOS transistors Avalanche energy rated

文件:80.57 Kbytes Page:9 Pages

PHILIPS

飞利浦

TFF4N60产品属性

  • 类型

    描述

  • 型号

    TFF4N60

  • 制造商

    TAK_CHEONG

  • 制造商全称

    Tak Cheong Electronics(Holdings) Co.,Ltd

  • 功能描述

    N-Channel Power MOSFET 4.1A, 600V, 2.5Ω

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