N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF3622 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =30V,ID =25A RDS(ON) =

低压MOSFET

N-Channel Enhancement Mode Power MOSFET

General Description The TF3622DS is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The TF3622DS meet the RoHS and Green Product requirement,100 EAS guarante

Bases for ASN-SERIE Cabinets

Product Description Bases for ASN-Serie Cabinets. The base is constructed out of four side and four corner profiles which correspond to the depth and width of the cabinet.

Adafruit AMG8833 IR Thermal Camera FeatherWing

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Passive Components

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Threaded Smooth Bore Bushings

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Threaded Smooth Bore Bushings

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