P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF110P03N combines advanced trench MOSFETtechnology with a low resistance package toprovideextremely low RDS(ON). ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resistan

场效应管(MOSFET)

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -105.5A, RDS(ON) =5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) =8.5mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -92A, RDS(ON) =6.0mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) =9.0mW @VGS = -4.5V. RoHS compliant.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -105.5A, RDS(ON) =5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) =8.5mW @VGS = -4.5V.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -105.5A, RDS(ON) =5.8mΩ @VGS = -10V. RDS(ON) =8.5mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-220 & TO-263 package.

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -92A, RDS(ON) =6.0mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) =9.0mW @VGS = -4.5V. RoHS compliant.