20 W 20 W dual BTL class-D audio amplifier

Description The TDA7491HV is a dual BTL class-D audio amplifier with single power supply designed for LCD TVs and monitors. Thanks to the high efficiency and slug-down package no heatsink is required. Furthermore, the filterless operation allows a reduction in the external component count. The

20 W 20 W dual BTL class-D audio amplifier

Features • 20 W + 20 W continuous output power: – RL = 8 Ω, THD = 10% at VCC = 18 V • Wide-range single-supply operation (5 - 18 V) • High efficiency (η = 90%) • Four selectable, fixed gain settings of nominally 20 dB, 26 dB, 30 dB and 32 dB • Differential input minimize common-mode

20W+20W双BTL D类音频放大器

20 W 20 W dual BTL class-D audio amplifier

Features • 20 W + 20 W continuous output power: – RL = 8 Ω, THD = 10% at VCC = 18 V • Wide-range single-supply operation (5 - 18 V) • High efficiency (η = 90%) • Four selectable, fixed gain settings of nominally 20 dB, 26 dB, 30 dB and 32 dB • Differential input minimize common-mode

20 W 20 W dual BTL class-D audio amplifier

Description The TDA7491HV is a dual BTL class-D audio amplifier with single power supply designed for LCD TVs and monitors. Thanks to the high efficiency and slug-down package no heatsink is required. Furthermore, the filterless operation allows a reduction in the external component count. The

20 W 20 W dual BTL class-D audio amplifier

Features • 20 W + 20 W continuous output power: – RL = 8 Ω, THD = 10% at VCC = 18 V • Wide-range single-supply operation (5 - 18 V) • High efficiency (η = 90%) • Four selectable, fixed gain settings of nominally 20 dB, 26 dB, 30 dB and 32 dB • Differential input minimize common-mode

20 W 20 W dual BTL class-D audio amplifier

Features • 20 W + 20 W continuous output power: – RL = 8 Ω, THD = 10% at VCC = 18 V • Wide-range single-supply operation (5 - 18 V) • High efficiency (η = 90%) • Four selectable, fixed gain settings of nominally 20 dB, 26 dB, 30 dB and 32 dB • Differential input minimize common-mode

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters

Bipolar Transistor -50V, -0.4A, Low VCE(sat) PNP Single SSFP

Bipolar Transistor –50V, –0.4A, Low VCE(sat) PNP Single SSFP Features • Large current capacity • Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ[IC=0.5A, IB=50mA] • Ultrasmall package facilitates miniaturization in end products • Small ON-resistance (Ron) Appli

HEXFET Power MOSFET

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

10G USB 3.2 Re-timer (1-Port)

Features * Built-in re-timer ㅡ Integrated re-timer for USB 3.2 1-port (Tx/Rx) up to 10Gbps ㅡ Supports both Separate Reference Clock Independent SSC (SRIS) and Bit-Level Re- * timer (BLR) Architectures of USB3.1 Specification (Appendix-E) ㅡ 1055 compensation to recover up to 23dB channel loss

Bidirectional Active USB-C™ Cable for USB3.2 (10G) and DP1.3 (8.1G)

Features  Bidirectional active USB-C cable carrying 4L DP or 2L DP and USB3.2 - Supports up to 4L of DisplayPort in/out, with signal conditioning up to 8.1Gbps (supports HBR3, HBR2, HBR, RBR rates) - Supports USB3.1 in/out, with signal conditioning up to 10Gbps - Supports USB2.0 (480Mbps) -