N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

N-channel dual gate MOS-FETs

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V. FEATURES • Excellent linearity • Extremely low noise • Excellent return loss properties • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability

1:6 PCI CLOCK GENERATOR/ FANOUT BUFFER

The MPC903, MPC904 and MPC905 are six output clock generation devices targeted to provide the clocks required in a 3.3V or 5.0V PCI environment. The device operates from a 3.3V supply and can interface to either a TTL input or an external crystal. The inputs to the device can be driven with 5.0V w

Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)

Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility.

GENERAL PURPOSE TRANSISTOR ARRAYS

General Purpose Transistor Arrays

GENERAL PURPOSE TRANSISTOR ARRAYS

General Purpose Transistor Arrays

Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)