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型号 功能描述 生产厂家 企业 LOGO 操作

NAND GATES

DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40

STMICROELECTRONICS

意法半导体

NAND GATES

DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40

STMICROELECTRONICS

意法半导体

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

PHILIPS

飞利浦

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

PHILIPS

飞利浦

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

PHILIPS

飞利浦

替换型号 功能描述 生产厂家 企业 LOGO 操作

CMOS NAND Gates

INTERSIL

Dual 4-Input NOR(NAND) Gate

NSC

国半

Dual 4-Input NOR(NAND) Gate

NSC

国半

CMOS NAND GATES

TI

德州仪器

CMOS NAND GATES

TI

德州仪器

The CD4011B, CD4012B, and CD4023B types are supplied in 14-lead hermetic dual-in-line ceramic packages

TI

德州仪器

NAND GATES

STMICROELECTRONICS

意法半导体

NAND GATES

STMICROELECTRONICS

意法半导体

Dual 4-input NAND Gate

HITACHIHitachi Semiconductor

日立日立公司

Dual 4-input NAND gate

PHILIPS

飞利浦

Dual 4-input NAND gate

PHILIPS

飞利浦

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

ONSEMI

安森美半导体

B−Suffix Series CMOS Gates

ONSEMI

安森美半导体

COMPLEMENTARY METAL OXIDE SILICON

NTE

INPUT NAND GATE

RANDE

C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

TOSHIBA

东芝

更新时间:2026-5-22 14:09:02
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