2,048 WORD X 8 BIT CMOS STATIC RAM

DESCRIPTION The TC5518CP/CF is a 16384-bit high speed and low power sully static random access memory orga- nized as 2048 words by a 8 bits using CMOS tech- nology, and operates from a single 5 volt supply. The TC5518CP/CF has two chip enable inputs, CE 1 and CE2, which are used for device

2,048 WORD X 8 BIT CMOS STATIC RAM

DESCRIPTION The TC5518CP/CF is a 16384-bit high speed and low power sully static random access memory orga- nized as 2048 words by a 8 bits using CMOS tech- nology, and operates from a single 5 volt supply. The TC5518CP/CF has two chip enable inputs, CE 1 and CE2, which are used for device

2,048 WORD X 8 BIT CMOS STATIC RAM

DESCRIPTION The TC5518CP/CF is a 16384-bit high speed and low power sully static random access memory orga- nized as 2048 words by a 8 bits using CMOS tech- nology, and operates from a single 5 volt supply. The TC5518CP/CF has two chip enable inputs, CE 1 and CE2, which are used for device

High Current RF Chokes

Special Features • Very high current capacity • Low DCR • Ferrite core • VW-1 rated shrink tubing to cover winding • Fixed lead spacing • Operating temperature -55 to +105°C • Current to cause 5 maximum inductance drop or 35°C maximum temperature rise

High-Current, High-Performance DrMOS Power Module

General Description The AOZ5518QI is a high efficiency synchronous buck power stage module consisting of two asymmetrical MOSFETs and an integrated driver. The MOSFETs are individually optimized for operation in the synchronous buck configuration. The High-Side MOSFET is optimized to achieve

High Current Chokes

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POWER MOS 7 FREDFET

文件：94.25 Kbytes Page：5 Pages

POWER MOS 7 R FREDFET

文件：96.45 Kbytes Page：5 Pages