位置：首页 > IC中文资料第5871页 > TC51V
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TC51V | 500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators [TAK_CHEONG] SpecificationFeatures: ■ZenerVoltageRange2.0to56Volts ■LL-34(Mini-MELF)Package ■SurfaceDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■Allexternalsurfacesarecorrosionresistantandleadsarereadilysolderable ■1stbandin | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 |  |   |
TC51V | 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators SpecificationFeatures: ■ZenerVoltageRange2.0to75Volts ■DO-35Package(JEDEC) ■Through-HoleDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■AllExternalSurfacesAreCorrosionResistantAndLeadsAreReadilySolderable ■RoHSCompliant ■Solder | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子（集团）有限公司 |  | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  | | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
TC51V产品属性
- 类型
描述
- 型号
TC51V
- 功能描述
500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
3850 |
原厂直销,现货供应,账期支持! |
|||
TOSH |
23+ |
SOP |
20000 |
全新原装假一赔十 |
|||
TOSHIBA |
24+ |
TSSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
TOSHIBA |
2020+ |
TSOP |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
TOSHIBA/东芝 |
24+ |
TSOP70 |
990000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
98+ |
TSSOP |
2500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA/东芝 |
21+ |
SMD |
7890 |
||||
tosh |
23+ |
NA |
2736 |
专做原装正品,假一罚百! |
|||
TOS |
TSOP |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TOSHIBA/东芝 |
22+ |
TSOP70 |
12245 |
现货,原厂原装假一罚十! |
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