位置：首页 > IC中文资料第5871页 > TC51V
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TC51V | 500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators [TAK_CHEONG] SpecificationFeatures: ■ZenerVoltageRange2.0to56Volts ■LL-34(Mini-MELF)Package ■SurfaceDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■Allexternalsurfacesarecorrosionresistantandleadsarereadilysolderable ■1stbandin | ETC1List of Unclassifed Manufacturers 未分类制造商 |  |   |
TC51V | 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators SpecificationFeatures: ■ZenerVoltageRange2.0to75Volts ■DO-35Package(JEDEC) ■Through-HoleDeviceTypeMounting ■HermeticallySealedGlass ■CompressionBondedConstruction ■AllExternalSurfacesAreCorrosionResistantAndLeadsAreReadilySolderable ■RoHSCompliant ■Solder | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子（集团）有限公司 |  | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
262,144 WORD X 16 BIT DYNAMIC RAM Description TheTC51V4260DFTSisthenewgenerationdynamicRAMorganized262,144wordby16bits.TheTC51V4260DFTSuti- lizesToshiba'sCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperating margins,bothinternallyandtothesystemuser.Multip | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC51V8512AFisa4MbithighspeedCMOSpseudostaticRAMorganizedas524,288wordsby8bits.TheTC51V8512AF utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpower storage.TheTC51V8512AFoperatesfrom | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
TC51V产品属性
- 类型
描述
- 型号
TC51V
- 功能描述
500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
TSSOP44 |
18000 |
|||||
TOS |
2023+ |
TSOP |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
TOSHIBA |
23+24 |
TSOP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
TOSHBA |
22+ |
SOJ40 |
40723 |
原装正品现货,可开13个点税 |
|||
TOSHIBA/东芝 |
2024+实力库存 |
TSSOP |
5 |
只做原厂渠道 可追溯货源 |
|||
TOS |
97+ |
TSOP/44 |
27 |
原装现货海量库存欢迎咨询 |
|||
TOS |
22+ |
TSOP |
6868 |
原装现货,可开13%税票 |
|||
TOSHIBA |
23+ |
TSSOP |
30000 |
代理全新原装现货,价格优势 |
|||
TOSHIBA/东芝 |
22+ |
TSOP70 |
2897 |
只做原装自家现货供应! |
|||
TOSHIBA |
19+ |
9850 |
公司原装现货/随时可以发货 |
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TC51V规格书下载地址
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TC51V数据表相关新闻
TC51N2702ECBTR
TC51N2702ECBTR
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原装现货
2020-10-15
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