500 mW LL-34 Hermetically Sealed Glass Zener Voltage Regulators

[TAK_CHEONG] Specification Features: ■ Zener Voltage Range 2.0 to 56 Volts ■ LL-34 (Mini-MELF) Package ■ Surface Device Type Mounting ■ Hermetically Sealed Glass ■ Compression Bonded Construction ■ All external surfaces are corrosion resistant and leads are readily solderable ■ 1st band in

500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators

Specification Features: ■ Zener Voltage Range 2.0 to 75 Volts ■ DO-35 Package (JEDEC) ■ Through-Hole Device Type Mounting ■ Hermetically Sealed Glass ■ Compression Bonded Construction ■ All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable ■ RoHS Compliant ■ Solder

稳压二极管

稳压二极管

262,144 WORD X 16 BIT DYNAMIC RAM

Description The TC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. The TC51V4260DFTS uti- lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multip

262,144 WORD X 16 BIT DYNAMIC RAM

Description The TC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. The TC51V4260DFTS uti- lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multip

262,144 WORD X 16 BIT DYNAMIC RAM

Description The TC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. The TC51V4260DFTS uti- lizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multip

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from

524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC51V8512AF is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC51V8512AF utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC51V8512AF operates from