131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION The TC518128CPL/CSPL/CFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory (PSRAM) organized as 131,072 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to provide large capacity, high speed and low power. It uses a

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION The TC518128CPL/CSPL/CFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory (PSRAM) organized as 131,072 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to provide large capacity, high speed and low power. It uses a

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION The TC518128CPL/CSPL/CFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory (PSRAM) organized as 131,072 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to provide large capacity, high speed and low power. It uses a

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION The TC518128CPL/CSPL/CFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory (PSRAM) organized as 131,072 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to provide large capacity, high speed and low power. It uses a

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION The TC518128CPL/CSPL/CFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory (PSRAM) organized as 131,072 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to provide large capacity, high speed and low power. It uses a

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION The TC518128CPL/CSPL/CFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory (PSRAM) organized as 131,072 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to provide large capacity, high speed and low power. It uses a

131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM

DESCRIPTION The TC518128CPL/CSPL/CFL/CFWL/CFTL is a 1,048,578-bit CMOS pseudo static random access memory (PSRAM) organized as 131,072 words by 8 bits. It feature a one-transistor dynamic memory cell using CMOS peripheral circuitry to provide large capacity, high speed and low power. It uses a

131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM

Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing

131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM518128/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMO

131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM518128/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMO

131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM518128/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMO

131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM518128/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMO