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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TC518128AF | 131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  |   |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072WORDx8BITCMOSPSEUDOSTATICRAM Description TheTC518128Aisa1MbithighspeedCMOSpseudostaticRAMorganizedas131,072wordsby8bits.TheTC518128Autilizes aonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,highspeedandlowpowerstorage.The TC518128Aoperatesfromasing | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 |  | | |
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | | | |
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | | | |
131,072-WordX8-BitDYNAMICRAM:FASTPAGEMODETYPE DESCRIPTION TheMSM518128/Lisa131,072-wordx8-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM518128/Lachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetalCMO | OKIOki Electric Cable Co.,Ltd 冲电线冲电线株式会社 | | |
TC518128AF产品属性
- 类型
描述
- 型号
TC518128AF
- 制造商
Toshiba America Electronic Components
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOS |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
||||
TOS |
23+ |
SOP |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
TOS |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
||||
TOSHIBA |
23+ |
NA |
1822 |
专做原装正品,假一罚百! |
|||
Toshiba |
32 |
公司优势库存 热卖中!! |
|||||
TOS |
22+ |
SMD32 |
8200 |
原装现货库存.价格优势 |
|||
TOSHIBA |
SOP |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
TOSHIBA/东芝 |
23+ |
NA/ |
3300 |
原厂直销,现货供应,账期支持! |
|||
TOS |
22+ |
SOP |
7500 |
十年品牌!原装现货!!! |
|||
TOSHIBA |
23+ |
SOP32 |
8560 |
受权代理!全新原装现货特价热卖! |
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TC518128AF规格书下载地址
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DdatasheetPDF页码索引
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