TC518128AF芯片数据手册东芝供应代理商TOSHIBA-IC资料网

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型号	功能描述	生产厂家企业	LOGO
TC518128AF	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AF-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AF-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AF-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFTL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFTL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFTL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFTL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFW	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFW-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFW-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFW-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFWL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFWL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFWL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFWL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
MSM518128	131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM518128/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMO	OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社	OKI
MSM518128L	131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM518128/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMO	OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社	OKI
MSM518128L-XXJS	131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM518128/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMO	OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社	OKI
MSM518128-XXJS	131,072-Word X 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM518128/L is a 131,072-word x 8-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM518128/L achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/single-layer metal CMO	OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社	OKI

TC518128AF产品属性

类型
描述
型号
TC518128AF
制造商
Toshiba America Electronic Components

TC518128AF供应商更多...

更新时间：2025-10-16 10:18:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市东来宝电子科技有限公司	TC518128AFL-80	TOSHIBA/东芝	24+	SOP	22055	郑重承诺只做原装进口现货	询价
深圳市科恒伟业电子有限公司	TC518128AFL-10LV	TOSHIBA/东芝	2450+	SOP	6540	只做原厂原装正品现货或订货!终端工厂可以申请样品!	询价
深圳市壹芯创科技有限公司	TC518128AFL-80	TOS	22+	SMD32	8200	原装现货库存.价格优势	询价
深圳市富诚威科技有限公司	TC518128AFWL-10	TOS	25+	SOP	7500	十年品牌!原装现货!!!	询价
深圳市昊创电子有限公司	TC518128AFL-80	TOSHIBA/东芝	1824+	SOP	4850	原装现货专业代理,可以代拷程序	询价
深圳市一线半导体有限公司	TC518128AFL-10LV	TOS	24+	SOP	20		询价
深圳市威尔健半导体有限公司	TC518128AFWL-10	TOSHIBA/东芝	23+	SOP32	50000	全新原装正品现货,支持订货	询价
深圳市振宏微科技有限公司	TC518128AFL80	TOSHIBA	23+	NA	1822	专做原装正品,假一罚百!	询价
深圳市宏捷佳电子科技有限公司	TC518128AFWL-80	原厂	2024+	SOP	50000	原装现货	询价
瀚佳科技(深圳)有限公司	TC518128AFTL-10	TOSHIBA	24+		9850	公司原装现货/随时可以发货	询价

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TC518128AF产品属性

TC518128AF供应商更多...

TC518128AF芯片相关品牌

TC518128AF规格书下载地址

TC518128AF参数引脚图相关

TC518128AF数据表相关新闻

TC51N2702ECBTR

TC58DVG3S0ETA00

TC4452VPA

TC4452VOA

TC58CVG2S0HRAIJ

TC4432EOA

DdatasheetPDF页码索引