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型号	功能描述	生产厂家企业	LOGO
TC518128AF	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AF-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AF-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AF-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFTL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFTL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFTL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFTL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFW	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFW-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFW-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFW-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFWL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFWL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFWL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AFWL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AP	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AP-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AP-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128AP-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128APL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128APL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128APL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128APL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128ASP	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128ASP-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128ASP-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128ASP-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128ASPL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128ASPL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128ASPL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128ASPL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFL-10L	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFL-10V	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFL-70	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFL-70L	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFL-70V	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFL-80L	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFL-80V	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFTL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFTL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-10L	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-10V	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-70	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-70L	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-70V	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-80L	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518128BFTL-80V	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFWL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518128BFWL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B operates from a sing	TOSHIBA 东芝	TOSHIBA

TC518128产品属性

类型
描述
型号
TC518128
制造商
Toshiba America Electronic Components

TC518128供应商更多...

更新时间：2026-1-1 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	TC518128CFTL-80	TOSHIBA/东芝	24+	NA/	4750	原厂直销,现货供应,账期支持!	询价
上海意淼电子科技有限公司	TC518128CFTL-80	TOSH	23+	TSOP32	20000	全新原装假一赔十	询价
深圳市科芯源微电子有限公司	TC518128CFTL-70	TOSHIBA/东芝	25+	SOP32p300PCS	65428	百分百原装现货实单必成	询价
深圳市华斯顿科技有限公司	TC518128CFTL-70	TOS	25+23+	SOP-32	10345	绝对原装正品全新进口深圳现货	询价
深圳市胜彬电子有限公司	TC518128CFTL-70	TOSHIBA	22+	TSSOP	3000	原装正品,支持实单	询价
深圳市坤融电子科技有限公司	TC518128CFTL-10	TOSHIBA/东芝	2025+	TSOP	5000	原装进口,免费送样品!	询价
深圳市毅创腾电子科技有限公司	TC518128CFTL-80V	TOS	23+	TSSOP/32	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市壹芯创科技有限公司	TC518128CFTL-70	TOS	22+	SOP32P300PCS	8200	原装现货库存.价格优势	询价
深圳市一线半导体有限公司	TC518128CFTL-80V	TOS	24+	TSSOP32	79		询价
深圳市宇创芯科技有限公司	TC518128CFTL-80	TOSHIBA/东芝	24+	SSOP	9600	原装现货,优势供应,支持实单!	询价

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