7 W Packaged Single-Bias PHEMT GaAs Power FETs

DESCRIPTION The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillators and power amplifiers in a wi

Hybrid IC

Off-Line QR Flyback Switcher IC with Integrated USB Type-C and USB PD Controller, High-Voltage Switch, Synchronous Rectification and FluxLink Feedback

USB Type C and PD Controller • USB Power Delivery 3.0 + PPS provider and QC4 support • Compliant with USB Type-C Rev. 1.3 • Integrated VCONN FETs with soft start and over-current protection • Supports electronically marked cables • Configurable pull-up resistor Rp • On chip temperature senso

0.05A , 35V NPN Plastic Encapsulated Transistor

FEATURES • High Power Gain APPLICATIONS • High Frequency Application • HF, VHF Band Amplifier Application

TRANSISTOR (NPN)

FEATURES • High Power Gain APPLICATIONS • High Frequency Application • HF,VHF Band Amplifier Application

EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, HF VHF BAND AMPLIFIER)

HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES • High Power Gain : Gpe = 29dB(Typ.)(f=10.7MHz)

NPN Silicon Epitaxial Planar Transistor

FEATURES • High power gain. APPLICATIONS • High frequency application. • HF,VHF band amplifier appilication.