EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY, HF VHF BAND AMPLIFIER)

HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURES • High Power Gain : Gpe = 29dB(Typ.)(f=10.7MHz)

丝印代码：RO；NPN Silicon Epitaxial Planar Transistor

FEATURES • High power gain. APPLICATIONS • High frequency application. • HF,VHF band amplifier appilication.

TRANSISTOR (NPN)

FEATURES • High Power Gain APPLICATIONS • High Frequency Application • HF,VHF Band Amplifier Application

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Power Gain APPLICATIONS ● High Frequency Application ● HF,VHF Band Amplifier Application

0.05A , 35V NPN Plastic Encapsulated Transistor

FEATURES • High Power Gain APPLICATIONS • High Frequency Application • HF, VHF Band Amplifier Application

SOT-23 Plastic-Encapsulate Transistors

FEATURES High Power Gain APPLICATIONS High Frequency Application HF,VHF Band Amplifier Application

Plastic-Encapsulate Transistors

FEATURES • High power gain

Plastic-Encapsulate Transistors

FEATURES • High power gain

双极型晶体管

普通三极管

双极型晶体管

丝印代码：RR/RO/RY；NPN Silicon Epitaxial Planar Transistor

文件：1.09332 Mbytes Page：2 Pages

丝印代码：RO；NPN Silicon Epitaxial Planar Transistor

文件：190.22 Kbytes Page：4 Pages

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High Gpe. Applications HF,VHF band amplifier application. 

NPN Silicon Epitaxial Planar Transistor

文件：190.22 Kbytes Page：4 Pages

NPN Plastic Encapsulated Transistor

文件：59.22 Kbytes Page：1 Pages

DC/DC Converter IC for Parallel Charging of 3/4 cell Li-ion & NiMH Batteries

DESCRIPTION The MB3879 is a DC/DC converter IC for parallel charging of 3/4 cell Li-ion & NiMH batteries, which uses the pulse-width modulation (PWM) for controlling output voltages and output currents independently. This IC can dynamically control secondary batterie’s charge current, which

7 W Packaged Single-Bias PHEMT GaAs Power FETs

DESCRIPTION The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillators and power amplifiers in a wi

Micropower 800mA Low Noise Ceramic Stable Voltage Regulator for Low Voltage Applications

文件：725.47 Kbytes Page：11 Pages