Touch and Gate Level Shifter

Touch and Gate Level Shifter for High Resolution In-cell Notebook Panels\n\nTC2201 consists of a touch modulation buffer on the VCOMOUT path, a 2:1 multiplexer for VCOMDC, touch modulation signal and gate level shifter. Touch modulation signal level are programmable and controlled by I2C interface a

车充充电器系列

Plastic Packaged Low Noise PHEMT GaAs FETs

文件：131.9 Kbytes Page：4 Pages

Plastic Packaged Low Noise PHEMT GaAs FETs

文件：159.72 Kbytes Page：4 Pages

Dual CC/CV Mode Switch Controller

文件：263.18 Kbytes Page：6 Pages

Packaged FET

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Speech Synthesizer LSI with on-chip 384K Mask ROM

GENERAL DESCRIPTION The ML2201 is a PCM-based speech synthesizer LSI having an on-chip 384K Mask ROM, D/A Converter and Low Pass Filter. Utilizing the serial interface enables smaller footprint packaging, which makes the chip an ideal choice for a pre-recorded message subsystem used with tod

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr

0 to 200 kPa (0 to 29 psi) 40 mV FULL SCALE SPAN (TYPICAL)

The MPX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the applied pressure. The sensor is a single monolithic silicon diaphragm with the strain gauge and a thin–film resistor network integr