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型号 功能描述 生产厂家 企业 LOGO 操作
TBP210G

桥式整流器

TBP/IF:2A/ Vol:1000V/ VF@IF:2A=>1.1V/ Tj:-55~150℃/

HY

虹扬科技

TBP210G

GLASS PASSIVATED BRIDGE RECTIFIERS

文件:34.35 Kbytes Page:2 Pages

HY

虹扬科技

TBP210G

GLASS PASSIVATED BRIDGE RECTIFIERS

文件:143.88 Kbytes Page:3 Pages

HY

虹扬科技

TBP210G

Glass Passivated Bridge Rectifiers

文件:393.67 Kbytes Page:3 Pages

HY

虹扬科技

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS MJD200 NPN MJD210 PNP NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —VCEO(sus)= 25 Vdc (Min) @ IC= 10 mAdc

MOTOROLA

摩托罗拉

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

MOTOROLA

摩托罗拉

POWER RECTIFIERS(2.0A,500-1000V)

Surface Mount Ultrafast Power Rectifiers Ideally suite for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

MOSPEC

统懋

POWER RECTIFIERS(2.0A,500-1000V)

MOSPEC

统懋

Voltage Follower

文件:348.91 Kbytes Page:16 Pages

NSC

国半

TBP210G产品属性

  • 类型

    描述

  • VRRM(V):

    1000

  • IO(A):

    2

  • IFSM(A):

    60

  • VF(V):

    1.10

  • IR(uA):

    10

更新时间:2026-8-2 10:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HYElectronicCorp
24+
NA
3000
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