Medium Power Bipolar Transistors

Features: • High performance, low frequency devices typically with current ratings 1A Up to 1W power dissipation. • NPN silicon planar epitaxial transistors. • Driver stages of audio amplifier application.

High Current Transistors

High Current Transistors NPN Silicon

NPN medium power transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers.

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CT series is supplied in the conventional leaded SOT82 package. FEATURES • Low forward volt dr

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. ■ LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT C

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. ■ LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT C