NPN EPITAXIAL SILICON TRANSISTOR

Switching and Amplifier Applications • Complement to BC636/638/640

NPN medium power transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers.

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS High Current Transistor

High Current Transistors

High Current Transistors NPN Silicon

45 V, 1 A NPN medium power transistors

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High current transistors

COMPLEMENTARY SILICON TRANSISTORS

NPN Type Plastic Encapsulated Transistor

FEATURE High current transistor

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose switching and amplifier applications.

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers

NPN Silicon AF Transistors (High current gain High collector current)

NPN Silicon AF Transistors ● High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 (PNP)

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers

TRANSISTOR (NPN)

FEATURES High current transistors

NPN Silicon AF Transistors

NPN Silicon AF Transistors● High current gain\n● High collector current\n● Low collector-emitter saturation voltage\n● Complementary types: BC 636, BC 638, BC 640 (PNP)

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：带盒（TB） 描述：TRANS NPN 45V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

GERMANIOVE TRANZISTORY

文件：1.9422 Mbytes Page：14 Pages

45 V, 1 A NPN medium power transistors

45 V, 1 A NPN medium power transistors

文件：160.55 Kbytes Page：15 Pages

45 V, 1 A NPN medium power transistors

NPN medium power transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages of audio/video amplifiers.

SILICON PLANAR EPITAXIAL TRANSISTORS

SILICON PLANAR EPITAXIAL TRANSISTORS High Current Transistor

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 45V 1A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

45 V, 1 A NPN medium power transistors

General Purpose Transistor

文件：378.36 Kbytes Page：2 Pages

45 V, 1 A NPN medium power transistors

45 V, 1 A NPN medium power transistors

文件：160.55 Kbytes Page：15 Pages

SMALL SIGNAL NPN TRANSISTOR

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CT series is supplied in the conventional leaded SOT82 package. FEATURES • Low forward volt dr

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. ■ LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT C

DUAL WIDE BAND OPERATIONAL AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This device is particularly intended for applications where multiple carriers must be amplified simultaneously with very low intermodulation products. It has been mainly designed to fit with ADSL chip-set such as ST70134 or ST70135. ■ LOW NOISE : 3.2nV/√Hz, 1.5pA/√Hz ■ HIGH OUTPUT C