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TBC635中文资料
TBC635数据手册规格书PDF详情
Features:
• High performance, low frequency devices typically with current ratings 1A Up to 1W power dissipation.
• NPN silicon planar epitaxial transistors.
• Driver stages of audio amplifier application.
TBC635产品属性
- 类型
描述
- 型号
TBC635
- 制造商
SPC Multicomp
- 功能描述
TRANSISTOR NPN TO-92
TBC635 资料下载更多...
TBC635 芯片相关型号
- DP83TC814X-Q1
- EP69-0001
- EP69-0002
- M3814
- MEPA-12PA-B
- MEPA-12PA-BSLASHQ
- MEPA-12PA-C
- MEPA-12PA-CSLASHQ
- MEPA-12PA-SSLASHQ
- QC7A12.0000F12B33AR
- QC7A12.0000F12B35AM
- QC7A12.0000F12B35AR
- QC7A12.0000F12B50AM
- QC7A12.0000F12B50AR
- QC7A12.0000F12B51AM
- QC7A12.0000F12B51AR
- QC7A12.0000F12B52AM
- QC7A12.0000F12B52AR
- QC7A12.0000F12B53AM
- QC7A12.0000F12B53AR
- QC7A12.0000F12B55AM
- QC7A12.0000F12B55AR
- REF5030EID
- REF5030EIDR
- REF5050EIDR
- REF5050EIDR.A
- TL072IPE4
- TPS3808G30DBVTG4
MULTICOMP相关芯片制造商
Datasheet数据表PDF页码索引
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