SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. PNP COMPLEMENTS ARE TBC327 AND TBC328. FEATURES . High VC EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : VCE ( sat )=0.7V (Max.) at I C=500mA

Amplifier Transistor

The LM337 is an adjustable 3–terminal negative voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of –1.2 V to – 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further, it employs i

BROADBAND RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed primarily for wideband large–signal output and driver amplifier stages in the 400 to 512 MHz frequency range. • Specified 28 Volt, 470 MHz Characteristics Output Power = 80 Watts Minimum Gain = 7.3 dB Efficiency = 50 (Min) • Buil

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: ● Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45 ● Intermodulation Distortion @ 20

5-Amp Adjustable Regulators

文件：396.27 Kbytes Page：16 Pages

5-Amp Adjustable Regulators

文件：396.27 Kbytes Page：16 Pages