250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

GENERAL DESCRIPTION The TAN250A is a high powered COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch fo

high power COMMON BASE bipolar transistor.

GENERAL DESCRIPTION The TAN 250A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input output prematch for bro

RF POWER TRANSISTOR

DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

封装/外壳：55AW 包装：托盘 描述：RF TRANS NPN 60V 1.215GHZ 55AW 分立半导体产品 晶体管 - 双极（BJT）- 射频

250 W, 50 V, high power common base bipolar transistor

Commercial Composition 9mm Diameter Variable Resistors

文件：1.41052 Mbytes Page：4 Pages

High peak current carrying capability up to 6000A

文件：299.59 Kbytes Page：3 Pages

DC axial fans

文件：375.69 Kbytes Page：3 Pages

DC axial fans

文件：345.75 Kbytes Page：3 Pages

DC axial fans

文件：505.68 Kbytes Page：3 Pages