RF POWER TRANSISTOR

DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

RF POWER TRANSISTOR

high power COMMON BASE bipolar transistor.

GENERAL DESCRIPTION The TAN 250A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input output prematch for bro

RF POWER TRANSISTOR

DESCRIPTION: The ASI TAN250A is a Common Base Transistor Designed for DME, TACAN and IFF Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

250 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

GENERAL DESCRIPTION The TAN250A is a high powered COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch fo

封装/外壳：55AW 包装：托盘 描述：RF TRANS NPN 60V 1.215GHZ 55AW 分立半导体产品 晶体管 - 双极（BJT）- 射频

250 W, 50 V, high power common base bipolar transistor

Commercial Composition 9mm Diameter Variable Resistors

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High peak current carrying capability up to 6000A

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DC axial fans

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DC axial fans

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DC axial fans

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