网络存储安全芯片

T680是目前方寸芯片中接口比较丰富的一款产品。具有功能丰富、性能强劲、功耗低、安全性高等特点，可广泛适用于加密移动硬盘、加密固态硬盘、视频链路加密机、VPN终端网关、安全网关、网闸、单向导入导出设备、USB安全网卡、密码卡、密码机、USB接口芯片等众多安全领域产品。该芯片集成国产32位高性能RISC CPU，可支持USB3.0、SATA3.0、GMAC、eMMC等多种超高速接口，并集成多种国密算法（如SM2、SM3、SM4），可满足国家信息安全领域需求；同时该芯片也支持国际标准AES加密算法及ECC算法，可应用于全球通用安全市场。该芯片提供完整的SDK供客户进行定制化开发，尤其针对典型应用场

可控硅/二极管Discs

The T680N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 48mm and a height of 14mm. ·Full blocking capability 50/60 Hz over a wide temperature range\n ·High DC blocking stability\n ·High surge current capability\n ·High turn-on di/dt capability\n ·High dv/dt capability;

Single-channel Driver IC with Thermal Monitoring

文件：228.5 Kbytes Page：6 Pages

Single-channel Driver IC with Driver IC with Monitoring

文件：190.19 Kbytes Page：6 Pages

Single-channel Driver IC with Thermal Monitoring

文件：228.5 Kbytes Page：6 Pages

Single-channel Driver IC with Driver IC with Monitoring

文件：190.19 Kbytes Page：6 Pages

Single-channel Driver IC with Thermal Monitoring

文件：228.5 Kbytes Page：6 Pages

Meet ROHS, Green Product.

文件：724.47 Kbytes Page：11 Pages

Package in 8mm tape on 7 diameter reels.

文件：681.42 Kbytes Page：11 Pages

Package in 8mm tape on 7 diameter reels.

文件：680.84 Kbytes Page：11 Pages

Package in 8mm tape on 7 diameter reels.

文件：685.32 Kbytes Page：11 Pages

Netz-Thyristor Phase Control Thyristor

文件：246.63 Kbytes Page：10 Pages

Netz-Thyristor Phase Control Thyristor

封装/外壳：DO-200AA，A-PUK 包装：托盘 描述：SCR MODULE 1400V 1250A DO200AA 分立半导体产品 晶闸管 - SCR - 模块

封装/外壳：DO-200AA，A-PUK 包装：托盘 描述：SCR MODULE 1400V 1250A DO200AA 分立半导体产品 晶闸管 - SCR - 模块

Package in 8mm tape on 7 diameter reels.

文件：690.8 Kbytes Page：11 Pages

Package in 8mm tape on 7 diameter reels.

文件：683.62 Kbytes Page：11 Pages

Package in 8mm tape on 7 diameter reels.

文件：682.03 Kbytes Page：11 Pages

Package in 8mm tape on 7 diameter reels.

文件：682.35 Kbytes Page：11 Pages

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity •