Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

NPN SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

PNP SILICON DARLINGTON TRANSISTORS

PNP Silicon Darlington Transistors Epibase power darlington transistors (40W)

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

Silicon PNP Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

Silicon PNP Transistors

Features • With TO-126 package • In monolithic Darlington configuration • This transistor is intended for use in medium power linar and switching applications • Complement to type BD679

Silicon PNP Darligton Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675/BD677/BD679 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP DARL 80V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP DARL 80V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans Darlington PNP 80V 4A 3-Pin TO-126

Transistor

互补硅功率达林顿晶体管

SEMICONDUCTORS

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SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD675/A-BD677/A-BD679/A-BD681/A Compli

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

PNP DARLIGNTON POWER SILICON TRANSISTORS

PNP DARLIGNTON POWER SILICON TRANSISTORS For Use As Output Devices In Complementary General Purpose Amplifier Applications. COMPLEMENTARY TO BD675, 675A, 677, 677A, 679, 679A, 681 & 683 BD678, 678A, 680, 680A ARE EQUIVALENT TO MJE700, 702, 703.

Complementary power Darlington transistors

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Complement to type BD675A/677A/679A/681 • DARLINGTON • High DC current gain APPLICATIONS • For medium power linear and switching applications

Medium Power Linear and Switching Applications

Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively

Plastic Medium-Power Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Voltage 40~200 V Current 6 A Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O. ● For surface mounted applications in order to optimize board space ● Low power loss, High efficiency ● High surge capacity ● High temperature soldering guaranteed:260oC

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • F

Plastic Medium?뭁ower Silicon PNP Darlingtons

Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Cons

Silicon PNP Transistors

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Silicon PNP Transistors

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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SEMICONDUCTORS

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Medium Power Linear and Switching

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Plastic Medium-Power Silicon PNP Darlingtons

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6.0 A SCHOTTKY BARRIER DIODE

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6.0 A SCHOTTKY BARRIER DIODE

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Plastic Medium-Power Silicon PNP Darlingtons

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POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

Complete versatility for programming within the unit itself, thus eliminating the need for DIP switches in many situations

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