丝印代码：T245；4-bit dual supply translating transceiver with configurable voltage translation; 3-state

1. General description The 74AVC4T245 is an 4-bit, dual supply transceiver that enables bidirectional level translation. The device can be used as two 2-bit transceivers or as a 4-bit transceiver. It features four 2-bit input-output ports (nAn and nBn), a direction control input (nDIR), a outpu

丝印代码：T245Q；SN74ACT245-Q1 Automotive Octal Bus Transceivers With 3-State Outputs

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Operating voltage range of 4.5V to 5.5V • TTL-compatible i

丝印代码：T245Q；SN74ACT245-Q1 Automotive Octal Bus Transceivers With 3-State Outputs

1 Features • AEC-Q100 qualified for automotive applications: – Device temperature grade 1: -40°C to +125°C – Device HBM ESD classification level 2 – Device CDM ESD classification level C4B • Available in wettable flank QFN package • Operating voltage range of 4.5V to 5.5V • TTL-compatible i

丝印代码：T2452V；THVD24xxV ±70V Fault-Protected 3V to 5.5V RS-485 Transceivers with Flexible I/O Supply and IEC ESD

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • 3V to 5.5V RS-485 supply voltage • Differential output exceeds 2.1V for PROFIBUS compatibility with 5V supply • 1.65V to 5.5V Supply for logic signal interface • SLR Pin Selectable Data Rates:

丝印代码：T2452V；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

丝印代码：T2452V；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

丝印代码：T2452V；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

丝印代码：T2452V；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

丝印代码：T2452V；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

丝印代码：T2452V；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

丝印代码：T2452V；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

丝印代码：T2452V；THVD24xxV-EP Enhanced 3V to 5.5V RS-485 Transceivers With 1.8V VIO Capability

1 Features • Meets or exceeds the requirements of the TIA/ EIA-485A and TIA/EIA-422B standards • Enhanced Product – Military temperature range (-55°C to 125°C) – One wafer fabrication site and one assembly and test site – Gold bond wire, NiPdAu lead finish – Wafer lot traceability – Exten

PHASE CONTROL THYRISTORS

Phase Control Thyristors

TEMCo T24561 5 kVA, 200 Primary Volts x 600 Secondary Volts, 50/60 Hz, Single Phase, Aluminum

Heads up: This item is manufactured in Canada. A 25% tariff is included in the displayed price. If the tariff is removed prior to shipment, we will refund the included 25%. • 50/60 Hz\n• 150°C rise\n• 10 Year Warranty\n;

TEMCo T24568 75 kVA, 200 Primary Volts x 600 Secondary Volts, 50/60 Hz, Single Phase, Aluminum

Heads up: This item is manufactured in Canada. A 25% tariff is included in the displayed price. If the tariff is removed prior to shipment, we will refund the included 25%. • 50/60 Hz\n• 150°C rise\n• 10 Year Warranty\n;

TEMCo T24571 200 kVA, 200 Primary Volts x 600 Secondary Volts, 50/60 Hz, Single Phase, Aluminum

Heads up: This item is manufactured in Canada. A 25% tariff is included in the displayed price. If the tariff is removed prior to shipment, we will refund the included 25%. • 50/60 Hz\n• 150°C rise\n• 10 Year Warranty\n;

12VDC 1.5Amp 18Watt Desktop SMPSU

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NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

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N-channel silicon field-effect transistors

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