可控硅/二极管Discs

The T1551N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 120mm and a height of 26mm. ·Full blocking capability 50/60 Hz over a wide temperature range\n ·High DC blocking stability\n ·High surge current capability\n ·High turn-on di/dt capability\n ·High dv/dt capability;

片式晶闸管

T1551N 相控晶闸管盘组装在高可靠、坚固且密封的陶瓷外壳中，直径为 120 毫米，高度为 26 毫米。 • 完全阻断能力 50/60 Hz\n• 高直流阻断稳定性\n• 高浪涌电流能力\n• 高导通 di/dt 能力\n• 高 dv/dt 能力;

Isolated Transmitter

文件：341.75 Kbytes Page：4 Pages

Isolated Transmitter

文件：341.75 Kbytes Page：4 Pages

Telaire Accessories

文件：133.2 Kbytes Page：4 Pages

包装：散装 描述：OUTDOOR AIR ENCLOSURE 传感器，变送器 配件

包装：散装 描述：RF ANT 2.4GHZ/5.5GHZ WHIP TILT RF/IF，射频/中频和 RFID RF 天线

Phase Control Thyristor

Full blocking 50/60Hz over a wide range temperature range

文件：331.04 Kbytes Page：11 Pages

Phase Control Thyristor

文件：278.69 Kbytes Page：9 Pages

Telaire Accessories

文件：133.2 Kbytes Page：4 Pages

Low-voltage variable capacitance diode

DESCRIPTION The BB155 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD323 very small plastic SMD package. FEATURES • Very low capacitance spread • Excellent linearity • Low series resistance • Very small plastic SMD package. APPLICATIONS • Volta

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 6 mW (typ.) ● Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) ● Long lifetime, high reliability ● Thin side-view type package

L-BAND SPDT SWITCH

DESCRIPTION The UPG153TB and UPG155TB are L-band SPDT (Single Pole Double Throw) GaAs FET switches for digital cellular or cordless telephone application. The devices can operate from 100 MHz to 2.5 GHz with low insertion loss. These devices are housed in an original 6 pin super mini-mold package