Features

AEC-Q101 qualified

Maximum junction temperature: TJ = 175 °C

High-speed switching series

Minimized tail current

VCE(sat) = 1.65 V (typ.) @ IC = 80 A

Tight parameters distribution

Safer paralleling

Low thermal resistance

Applications

PFC

High frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.