Features

• AEC-Q101 qualified

• Maximum junction temperature: TJ = 175 °C

• VCE(sat) = 1.85 V (typ.) @ IC = 60 A

• Tail-less switching current

• Tight parameter distribution

• Low thermal resistance

• Positive VCE(sat) temperature coefficient

• Silicon carbide diode with no-reverse recovery charge is co-packaged in

freewheeling configuration

Applications

• Automotive converters

• Totem-pole power factor correction

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the V series IGBTs, which represent an optimum

compromise between conduction and switching losses to maximize the efficiency of

very high frequency converters. Furthermore, the positive VCE(sat) temperature

coefficient and very tight parameter distribution result in safer paralleling operation.

Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is

shown at turn-off of the SiC diode and the already minimal capacitive turn-off

behavior is independent of temperature. Its high forward surge capability ensures

good robustness during transient phases.