Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the new HB

series of IGBTs, which represent an optimum

compromise between conduction and switching

loss to maximize the efficiency of any frequency

converter. Furthermore, the slightly positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.55 V (typ.) @ IC = 30 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High frequency converters