Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the improved

H series of IGBTs, which represent an optimum

compromise between conduction and switching

loss to maximize the efficiency of high frequency

converters. Furthermore, a slightly positive

VCE(sat) temperature coefficient and very tight

parameter distribution result in safer paralleling

operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 2.1 V (typ.) @ IC = 15 A

• 5 µs minimum short-circuit withstand time at

TJ=150 °C

• Safe paralleling

• Low thermal resistance

Applications

• Uninterruptible power supply

• Welding machines

• Photovoltaic inverters

• Power factor correction

• High frequency converters