Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the improved H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 2.1 V (typ.) @ IC = 15 A

• 5 µs minimum short circuit withstand time at TJ=150 °C

• Safe paralleling

• Very fast recovery antiparallel diode

• Low thermal resistance

Applications

• Uninterruptible power supply

• Welding machines

• Photovoltaic inverters

• Power factor correction

• High frequency converters