Description

These devices are IGBTs developed using an

advanced proprietary trench gate and field stop

structure. The device is part of the new HB

series of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of any

frequency converter. Furthermore, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

Features

• Designed for soft commutation only

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.55 V (typ.) @ IC = 30 A

• Low VF soft recovery co-packaged diode

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Lead free package

Applications

• Microwave oven

• Resonant converters