Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Features

• 10 µs of short-circuit withstand time

• VCE(sat) = 1.85 V (typ.) @ IC = 25 A

• Tight parameters distribution

• Safer paralleling

• Low thermal resistance

• Soft and fast recovery antiparallel diode

Applications

• Industrial drives

• UPS

• Solar

• Welding